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KAI-4011-ABA-CR-AE

Onsemi

KAI-4011-ABA-CR-AE by Onsemi

Onsemi's KAI-4011-ABA-CR-AE is a 2048x2048 CCD image sensor with 7.4um pixel size, offering a dynamic range of 60dB. Ideal for applications requiring high-resolution imaging in a compact form factor, operating b/w -50 °C to 70°C with a data rate of 40Mbps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,036 parts In-Stock

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Vyrian

USA . 1,090 parts In-Stock

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Problanco Electronics

Mexico . 8,149 parts In-Stock

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TANS Electronics

Latvia . 4,483 parts In-Stock

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SupplyDigital Components

Austria . 2,950 parts In-Stock

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Kulean Microsystems

USA . 2,573 parts In-Stock

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Corphita

USA . 1,163 parts In-Stock

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UHIMA Technologies

Türkiye . 406 parts In-Stock

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Corohmni

South Africa . 166 parts In-Stock

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Overview

Experience the superior quality and cutting-edge technology of the KAI-4011-ABA-CR-AE by Onsemi, a leading manufacturer in the industry. As part of the Image Sensors category, this product offers unmatched precision and reliability for a wide range of applications. With its high pixel resolution and advanced features, customers can expect exceptional performance and versatility. Elevate your projects with the value, benefits, and advantages that the KAI-4011-ABA-CR-AE brings to the table, setting you apart from the competition. Trust Onsemi to deliver excellence every time.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size provides higher resolution and better image quality.

Body Width: 25.4 inch

Compact size allows for easy integration into various systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors deliver high-quality images with low noise levels.

Body Height: 4.95 mm

Low profile design makes it suitable for applications with space constraints.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy mounting and alignment in systems.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environments.

Horizontal Pixel: 2048

High pixel count helps capture detailed images with clarity.

Minimum Operating Temperature: -50 °C

Ability to operate in low temperatures expands the versatility of the product.

Housing: CERAMIC

Ceramic housing provides durability and protection for the sensor.

Dynamic Range: 60 dB

Wide dynamic range allows for capturing a wide range of light intensities.

Vertical Pixel: 2048

High vertical resolution ensures detailed image capture.

Body Length/Diameter: 35.56 mm

Optimal size for fitting into various systems.

Data Rate: 40 Mbps

High data rate allows for fast transmission of image data.

Termination Type: SOLDER

Solder termination provides a secure connection for reliable performance.

Array Type: INTERLINE

Interline array design helps reduce blooming and improve image quality.

Mounting Feature: THROUGH HOLE MOUNT

Easy mounting option for secure installation in systems.

Technical Specifications

Image Sensors KAI-4011-ABA-CR-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 16 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Data Rate:

40 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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