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KAI-16050-AXA-JD-B2

Onsemi

KAI-16050-AXA-JD-B2 by Onsemi

KAI-16050-AXA-JD-B2 by Onsemi is an image sensor with 5.5X5.5 um pixel size, 4896 horizontal pixels, and 3264 vertical pixels. It operates at temperatures from -50 to 70 °C and has a dynamic range of 64 dB. Ideal for applications requiring high-resolution imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,484 parts In-Stock

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Digiode

USA . 510 parts In-Stock

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510

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Problanco Electronics

Mexico . 3,729 parts In-Stock

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TANS Electronics

Latvia . 3,274 parts In-Stock

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SupplyDigital Components

Austria . 2,189 parts In-Stock

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Corphita

USA . 2,068 parts In-Stock

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Kulean Microsystems

USA . 1,392 parts In-Stock

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Corohmni

South Africa . 235 parts In-Stock

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UHIMA Technologies

Türkiye . 99 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-16050-AXA-JD-B2 by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers unparalleled quality and reliability in every product. This cutting-edge image sensor is designed for a wide range of applications, offering customers exceptional value and performance. From capturing stunning visuals to enhancing surveillance systems, the KAI-16050-AXA-JD-B2 provides unmatched benefits and advantages that will elevate your projects to new heights. Experience the difference with Onsemi's KAI-16050-AXA-JD-B2 image sensor today.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution image capture, making this product suitable for applications requiring detailed image quality.

Body Width: 45.34 inch

The compact body width makes this sensor easy to integrate into various devices or systems without taking up too much space.

Power Supplies (V): 15

Operates on a standard voltage of 15V, providing compatibility with common power sources and ensuring reliable performance.

Sensors or Transducers Type: IMAGE SENSOR,CCD

The CCD sensor type offers high sensitivity and low noise performance, making it ideal for high-quality image capture in various lighting conditions.

Package Shape or Style: RECTANGULAR

The rectangular shape allows for easy mounting and integration into different devices or systems, providing versatility in applications.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this sensor can withstand harsh environmental conditions and maintain functionality.

Horizontal Pixel: 4896

The high horizontal pixel count enables detailed and sharp image capture, suitable for applications requiring high-resolution imaging.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C ensures reliable performance even in extremely cold environments.

Dynamic Range: 64 dB

A wide dynamic range of 64 dB allows the sensor to capture both bright and dark areas in a scene accurately, offering enhanced image quality.

Vertical Pixel: 3264

The vertical pixel count of 3264 contributes to the overall high-resolution image output, making this sensor suitable for applications requiring detail.

Body Length/Diameter: 47.24 mm

The compact body length/diameter allows for easy integration and placement of the sensor in different devices or systems, enhancing flexibility.

Termination Type: SOLDER

Solder termination offers a secure and reliable connection, ensuring stable performance and durability in various operating conditions.

Array Type: INTERLINE

The interline array type provides fast readout speeds and efficient image capture, making this sensor suitable for dynamic imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the sensor on PCBs or other surfaces, enhancing stability in use.

Technical Specifications

Image Sensors KAI-16050-AXA-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Length/Diameter:

47.24 mm

Dynamic Range:

64 dB

Horizontal Pixel:

4896

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

3264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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