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MT9M002I12STC

Onsemi

MT9M002I12STC by Onsemi

The Onsemi MT9M002I12STC image sensor features 2.20x2.20 um pixel size, 1.7-1.9 V supply voltage range, and a 49.5 MHz master clock for high-quality imaging applications. With a resolution of 1472x1096 pixels and a frame rate of 60 fps, it is ideal for digital cameras, surveillance systems, and industrial imaging solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,332 parts In-Stock

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Digiode

USA . 1,060 parts In-Stock

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Problanco Electronics

Mexico . 5,035 parts In-Stock

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TANS Electronics

Latvia . 4,949 parts In-Stock

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Kulean Microsystems

USA . 4,399 parts In-Stock

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Kepictronics

USA . 2,350 parts In-Stock

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Corphita

USA . 2,216 parts In-Stock

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SupplyDigital Components

Austria . 1,393 parts In-Stock

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UHIMA Technologies

Türkiye . 525 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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Overview

Capture every moment with the MT9M002I12STC image sensor by Onsemi. Designed with precision and reliability in mind, this sensor offers unmatched quality and performance in a compact package. Whether you're looking to enhance your security system, improve your medical imaging devices, or revolutionize your automotive technology, this sensor is the perfect solution. With its advanced features and innovative design, the MT9M002I12STC delivers exceptional value and benefits to customers, making it the ideal choice for all your imaging needs. Choose Onsemi for superior technology that exceeds expectations.

Feature Benefit Bullets

Pixel Size (um): 2.20X2.20

Small pixel size allows for high resolution images and enhanced detail.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 49.5 MHz

High master clock frequency enables fast data processing and efficient image capture.

Body Width: 10 inch

Compact body width enables easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors provide high-quality images with low power consumption.

Body Height: 1.225 mm

Low body height allows for a slim and sleek design in the final product.

Package Shape or Style: SQUARE

Square package shape ensures easy handling and compatibility with standard mounting techniques.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage further enhances power efficiency and reduces operational costs.

Horizontal Pixel: 1472

High horizontal pixel count results in detailed and sharp images.

Output Range: 0.012-0.014mA

Narrow output range allows for precise current measurements and accurate data transmission.

Output Type: DIGITAL CURRENT

Digital current output simplifies data processing and interpretation.

Maximum Operating Current: 30 mA

High maximum operating current ensures reliable performance under various conditions.

Dynamic Range: 70.1 dB

Wide dynamic range enables capturing both high and low light levels accurately.

Vertical Pixel: 1096

High vertical pixel count contributes to improved image resolution and clarity.

Body Length/Diameter: 10 mm

Compact body length allows for flexible placement in devices with limited space.

Optical Format (inch): 1/4.5

Optical format provides compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections during device assembly.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication with other devices and systems.

Frame Rate: 60 fps

High frame rate enables smooth and fluid video recording and playback.

Array Type: FRAME

Frame array type allows for efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability makes installation and integration hassle-free.

Technical Specifications

Image Sensors MT9M002I12STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.60-3.10 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.225 mm

Body Length/Diameter:

10 mm

Dynamic Range:

70.1 dB

Frame Rate:

60 fps

Horizontal Pixel:

1472

Master Clock:

49.5 MHz

Mounting Feature:

Maximum Operating Current:

30 mA

Optical Format (inch):

1/4.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.20X2.20

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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