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KAI-0330-CBA-CB-BA-DUAL

Onsemi

KAI-0330-CBA-CB-BA-DUAL by Onsemi

KAI-0330-CBA-CB-BA-DUAL by Onsemi is an image sensor with 9x9 um pixel size, 648 horizontal pixels, and 484 vertical pixels. It operates at temperatures ranging from -50 to 70 °C and requires a power supply of 15V. Ideal for applications requiring high-resolution imaging in challenging environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,214 parts In-Stock

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Vyrian

USA . 105 parts In-Stock

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105

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Distributors (Availability)

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Problanco Electronics

Mexico . 6,241 parts In-Stock

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6,241

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Kulean Microsystems

USA . 3,899 parts In-Stock

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3,899

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TANS Electronics

Latvia . 2,874 parts In-Stock

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SupplyDigital Components

Austria . 1,360 parts In-Stock

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Corphita

USA . 516 parts In-Stock

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516

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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Corohmni

South Africa . 139 parts In-Stock

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Overview

Experience unparalleled image quality and clarity with the KAI-0330-CBA-CB-BA-DUAL by Onsemi. As a leading manufacturer in the industry, Onsemi delivers superior image sensors that are perfect for a wide range of applications. Whether you are looking to enhance security systems, medical imaging devices, or industrial cameras, this image sensor provides exceptional performance and reliability. Trust Onsemi to provide innovative solutions that meet your needs and exceed your expectations. Elevate your projects with the KAI-0330-CBA-CB-BA-DUAL and see the difference in quality and precision.

Feature Benefit Bullets

Pixel Size (um): 9X9

The small pixel size of 9X9 um allows for high resolution images with great detail, making this product ideal for applications requiring precision and clarity.

Power Supplies (V): 15

The 15V power supply enables efficient and reliable operation of the image sensor, ensuring consistent performance in various conditions.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this image sensor can withstand high temperatures, making it suitable for use in environments with elevated heat levels.

Horizontal Pixel: 648

The 648 horizontal pixels provide a wide field of view, allowing the image sensor to capture more detail and information in each frame.

Minimum Operating Temperature: -50 °C

The minimum operating temperature of -50 °C ensures that this image sensor can function even in extremely cold conditions, making it versatile and reliable in various environments.

Vertical Pixel: 484

With 484 vertical pixels, this image sensor offers a balanced resolution for capturing images with satisfactory detail and clarity in both vertical and horizontal dimensions.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount design simplifies the installation process and provides a secure and stable mounting solution, ensuring the image sensor remains in place during operation.

Technical Specifications

Image Sensors KAI-0330-CBA-CB-BA-DUAL attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Horizontal Pixel:

648

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Pixel Size (um):

9X9

Power Supplies (V):

15

Sub-Category:

CCD Image Sensors

Vertical Pixel:

484

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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