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NOIP1FN2000A-LTI

Onsemi

NOIP1FN2000A-LTI by Onsemi

NOIP1FN2000A-LTI by Onsemi features 1920x1200 resolution, 4.8um pixel size, and 360MHz master clock. Ideal for high-speed imaging applications with a frame rate of 230fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,245 parts In-Stock

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Digiode

USA . 2,004 parts In-Stock

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AZTECH Wire

Italy . 59 parts In-Stock

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$19.220

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Kulean Microsystems

USA . 6,568 parts In-Stock

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TANS Electronics

Latvia . 4,136 parts In-Stock

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SupplyDigital Components

Austria . 3,048 parts In-Stock

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Problanco Electronics

Mexico . 2,529 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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UHIMA Technologies

Türkiye . 269 parts In-Stock

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Corphita

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Overview

Capture the world in stunning detail with the NOIP1FN2000A-LTI Image Sensor by Onsemi. Designed with precision and expertise, this cutting-edge sensor offers unparalleled performance for a wide range of applications. From high-speed imaging to machine vision, this sensor delivers exceptional quality and reliability. Experience the value of superior image clarity, optimal sensitivity, and advanced features that set this product apart. Elevate your projects with the NOIP1FN2000A-LTI and unlock endless possibilities in imaging technology.

Feature Benefit Bullets

Pixel Size (um) 4.8X4.8

The small pixel size allows for high-resolution images to be captured with fine details.

Maximum Supply Voltage 1.9 V

The low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock 360 MHz

The high master clock frequency enables fast data readout and processing, suitable for applications requiring quick image capture.

Body Width 19 inch

The compact body width makes it easy to integrate this image sensor into various devices and systems.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensors offer high sensitivity, low noise, and low power consumption, making them ideal for capturing high-quality images.

Body Height 1.78 mm

The slim body height allows for compact designs and easy placement within constrained spaces.

Package Shape or Style SQUARE

The square package shape provides symmetry and simplicity in mounting the image sensor onto PCBs or other surfaces.

Minimum Supply Voltage 1.7 V

The low minimum supply voltage ensures that the image sensor can operate efficiently even under low power supply conditions.

Maximum Operating Temperature 85 °C

The high maximum operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel 1920

High horizontal pixel count enables detailed and sharp images to be captured with high resolution.

Minimum Operating Temperature -40 °C

The low minimum operating temperature ensures that the image sensor can function in cold environments without any issues.

Dynamic Range 60 dB

The wide dynamic range allows the image sensor to capture both bright and dark areas in a scene with good contrast.

Vertical Pixel 1200

The vertical pixel count contributes to the overall image quality and resolution of the captured images.

Body Length/Diameter 19 mm

The small form factor in terms of body length/diameter enables the image sensor to be easily integrated into compact devices.

Spectral Response (nm) 400-1000

The wide spectral response range allows the image sensor to capture a broad range of colors and wavelengths in the visible spectrum.

Optical Format (inch) 2/3

The 2/3 inch optical format is a standard size for image sensors, making it compatible with a wide range of lenses and optical systems.

Termination Type SOLDER

The solder termination type ensures secure and reliable connections between the image sensor and other electronic components.

Output Interface Type 4-WIRE INTERFACE

The 4-wire interface enables fast and efficient data transfer between the image sensor and external devices or processors.

Frame Rate 230 fps

The high frame rate allows for capturing fast-moving subjects or scenes with smooth and detailed motion.

Array Type FRAME

The frame array type provides a structured layout of pixels for efficient image sensing and processing.

Sensitivity (V/lx.s) 7.5 V/lx.s

The high sensitivity rating enables the image sensor to capture clear and bright images even in low light conditions.

Mounting Feature SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the image sensor on PCBs or other surfaces.

Technical Specifications

Image Sensors NOIP1FN2000A-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

1.78 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

230 fps

Horizontal Pixel:

1920

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

2/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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