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KAI-0340-ABB-CP-AA

Onsemi

KAI-0340-ABB-CP-AA by Onsemi

KAI-0340-ABB-CP-AA by Onsemi is an image sensor with 7.4x7.4 um pixel size, 640 horizontal pixels, and 480 vertical pixels. It operates b/w -50 to 70 °C with a supply voltage range of 14.75V to 15.25V. Ideal for applications requiring a CCD image sensor with a dynamic range of 62 dB in a ceramic, glass-sealed housing.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,379 parts In-Stock

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Digiode

USA . 1,932 parts In-Stock

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Kulean Microsystems

USA . 7,543 parts In-Stock

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SupplyDigital Components

Austria . 5,755 parts In-Stock

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TANS Electronics

Latvia . 4,596 parts In-Stock

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Problanco Electronics

Mexico . 2,670 parts In-Stock

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Corphita

USA . 665 parts In-Stock

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665

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Corohmni

South Africa . 188 parts In-Stock

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UHIMA Technologies

Türkiye . 72 parts In-Stock

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Overview

Experience crystal clear imaging with the KAI-0340-ABB-CP-AA by Onsemi, a cutting-edge image sensor that guarantees superior quality and performance. As a leading manufacturer in the industry, Onsemi's commitment to innovation ensures that this sensor delivers exceptional results in various applications. From surveillance systems to medical imaging, this product offers unmatched value, benefits, and advantages to customers looking for top-tier imaging solutions. Trust Onsemi to provide you with the best in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for detailed image capture and high resolution.

Maximum Supply Voltage: 15.25 V

Wide voltage range allows for versatile usage and compatibility with different systems.

Body Width: 12.45 inch

Compact size makes it suitable for integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors offer high-quality image capture and are commonly used in professional imaging devices.

Body Height: 5.15 mm

Low profile design enables easy integration and installation in compact spaces.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient placement and alignment within devices.

Minimum Supply Voltage: 14.75 V

Low minimum supply voltage helps in reducing power consumption and increasing efficiency.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Horizontal Pixel: 640

High pixel count enables high-resolution image output with detailed clarity.

Output Type: ANALOG VOLTAGE

Analog voltage output provides compatibility with a wide range of devices and systems.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for usage in cold environments without compromising performance.

Maximum Operating Current: 2.5 mA

Low operating current consumption reduces power requirements and prolongs battery life.

Housing: CERAMIC, GLASS-SEALED

Durable housing materials ensure protection and longevity of the image sensor.

Dynamic Range: 62 dB

High dynamic range allows for capturing a wide range of light intensities and ensuring accurate image representation.

Vertical Pixel: 480

Vertical pixel count contributes to the overall resolution and detail in the captured images.

Body Length/Diameter: 15.87 mm

Optimal size for fitting in various devices and equipment without occupying too much space.

Optical Format (inch): 1/3

Common optical format size allows for compatibility with standard lenses and imaging systems.

Termination Type: SOLDER

Solder termination provides secure connections and reliable performance in demanding conditions.

Array Type: INTERLINE

Interline array provides fast readout speeds and reduces image distortion for accurate imaging.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting ensures secure attachment and stability in installations.

Technical Specifications

Image Sensors KAI-0340-ABB-CP-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

12.45 inch

Body Height:

5.15 mm

Body Length/Diameter:

15.87 mm

Dynamic Range:

62 dB

Horizontal Pixel:

640

Housing:

CERAMIC, GLASS-SEALED

Mounting Feature:

Maximum Operating Current:

2.5 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/3

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.25 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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