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KAF-4301-AAA-JP-AE

Onsemi

KAF-4301-AAA-JP-AE by Onsemi

The Onsemi KAF-4301-AAA-JP-AE is a CCD image sensor with 24x24 um pixel size, offering a dynamic range of 87 dB. With a max supply voltage of 17.5 V and operating temperature range from -70 to 50 °C, it's ideal for full-frame imaging applications requiring high-quality images in the spectral response range of 300-1200 nm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,695 parts In-Stock

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Vyrian

USA . 1,614 parts In-Stock

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Kulean Microsystems

USA . 7,070 parts In-Stock

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Problanco Electronics

Mexico . 4,312 parts In-Stock

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TANS Electronics

Latvia . 4,001 parts In-Stock

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Corphita

USA . 1,132 parts In-Stock

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SupplyDigital Components

Austria . 892 parts In-Stock

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UHIMA Technologies

Türkiye . 284 parts In-Stock

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Corohmni

South Africa . 88 parts In-Stock

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Overview

Elevate your imaging experience with the KAF-4301-AAA-JP-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality image sensors that redefine clarity and precision. Perfect for a wide range of applications, this full-frame CCD sensor boasts a remarkable dynamic range and high pixel resolution. Unlock the potential of your projects with the superior performance and reliability of the KAF-4301-AAA-JP-AE, providing unmatched value and benefits to customers seeking unparalleled image quality.

Feature Benefit Bullets

Pixel Size (um): 24X24

The small pixel size allows for high resolution imaging, capturing fine details with clarity.

Maximum Supply Voltage: 17.5 V

The high maximum supply voltage provides flexibility in power supply options and can handle fluctuations without affecting performance.

Body Width: 58.42 inch

The compact body width makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, it offers high sensitivity and low noise performance, making it ideal for capturing high-quality images.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easier integration into different devices and systems.

Minimum Supply Voltage: 15 V

The low minimum supply voltage helps in reducing power consumption while still maintaining optimal performance.

Maximum Operating Temperature: 50 °C

With a high maximum operating temperature, this image sensor is suitable for use in a wide range of environments.

Horizontal Pixel: 2084

The high horizontal pixel count enables capturing detailed images with higher resolution.

Minimum Operating Temperature: -70 °C

The low minimum operating temperature allows this image sensor to be used in extreme cold conditions without loss of performance.

Dynamic Range: 87 dB

With a high dynamic range, this image sensor can capture both dark and bright areas in a scene accurately.

Vertical Pixel: 2084

The high vertical pixel count complements the horizontal resolution, ensuring detailed images in both dimensions.

Body Length/Diameter: 70.1 mm

The moderate body length/diameter size strikes a balance between compactness and functionality.

Spectral Response (nm): 300-1200

The wide spectral response range allows this image sensor to capture a broad range of wavelengths, making it versatile for various applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections in the assembly process.

Array Type: FULL FRAME

The full-frame array type provides a larger image sensor area, resulting in improved light sensitivity and image quality.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and offers mechanical stability in the device.

Technical Specifications

Image Sensors KAF-4301-AAA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 11 MICRO VOLT PER ELECTRON; Data Rate is 2.5MHZ

Array Type:

FULL FRAME

Body Width:

58.42 inch

Body Length/Diameter:

70.1 mm

Dynamic Range:

87 dB

Horizontal Pixel:

2084

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-70 Cel

Package Shape or Style:

Pixel Size (um):

24X24

Sensors or Transducers Type:

Spectral Response (nm):

300-1200

Maximum Supply Voltage:

17.5 V

Minimum Supply Voltage:

15 V

Termination Type:

SOLDER

Vertical Pixel:

2084

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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