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KAF-4301-AAA-JP-B1

Onsemi

KAF-4301-AAA-JP-B1 by Onsemi

The Onsemi KAF-4301-AAA-JP-B1 is a CCD image sensor with 24x24 um pixel size, offering a dynamic range of 87 dB. With a max supply voltage of 17.5 V, it operates in temperatures ranging from -70 to 50 °C. Ideal for full-frame applications requiring high-quality imaging in the spectral response range of 300-1200 nm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,795 parts In-Stock

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Digiode

USA . 60 parts In-Stock

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TANS Electronics

Latvia . 7,869 parts In-Stock

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SupplyDigital Components

Austria . 4,432 parts In-Stock

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Corphita

USA . 2,332 parts In-Stock

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Problanco Electronics

Mexico . 1,794 parts In-Stock

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UHIMA Technologies

Türkiye . 430 parts In-Stock

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Kulean Microsystems

USA . 360 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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Overview

Experience unparalleled image quality and clarity with the KAF-4301-AAA-JP-B1 Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in all their products. Ideal for a wide range of applications, this sensor offers exceptional value and benefits to customers seeking high-quality imaging solutions. Whether you're in the medical, industrial, or automotive sector, the KAF-4301-AAA-JP-B1 will elevate your projects to new heights with its advanced features and superior performance. Trust Onsemi for cutting-edge technology that delivers impressive results every time.

Feature Benefit Bullets

Pixel Size (um): 24X24

Higher pixel size allows for better light sensitivity and improved image quality.

Maximum Supply Voltage: 17.5 V

Allows for higher voltage input, providing more flexibility in power supply options.

Body Width: 58.42 inch

Compact size enables easy integration into various devices and systems.

Power Supplies (V): 17

Optimal power supply voltage for efficient operation.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture capabilities.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy mounting and alignment within a device.

Minimum Supply Voltage: 15 V

Low minimum supply voltage ensures energy efficiency.

Maximum Operating Temperature: 50 °C

Wide operating temperature range for versatility in various environments.

Horizontal Pixel: 2084

High-resolution horizontal pixels for detailed image capture.

Minimum Operating Temperature: -70 °C

Ultra-low minimum operating temperature for extreme conditions.

Dynamic Range: 87 dB

Wide dynamic range for capturing both bright and dark areas in high detail.

Vertical Pixel: 2084

High-resolution vertical pixels for detailed image capture.

Body Length/Diameter: 70.1 mm

Compact size for easy integration and space-saving design.

Spectral Response (nm): 300-1200

Wide spectral response range for capturing a broad range of colors and light wavelengths.

Termination Type: SOLDER

Solder termination provides secure and reliable connections.

Array Type: FULL FRAME

Full frame array type for capturing complete images without cropping or distortion.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature for secure and stable installation.

Technical Specifications

Image Sensors KAF-4301-AAA-JP-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 11 MICRO VOLT PER ELECTRON; Data Rate is 2.5MHZ

Array Type:

FULL FRAME

Body Width:

58.42 inch

Body Length/Diameter:

70.1 mm

Dynamic Range:

87 dB

Horizontal Pixel:

2084

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-70 Cel

Package Shape or Style:

Pixel Size (um):

24X24

Power Supplies (V):

17

Sensors or Transducers Type:

Spectral Response (nm):

300-1200

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

17.5 V

Minimum Supply Voltage:

15 V

Termination Type:

SOLDER

Vertical Pixel:

2084

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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