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KAF-4320-AAA-JP-B2

Onsemi

KAF-4320-AAA-JP-B2 by Onsemi

The Onsemi KAF-4320-AAA-JP-B2 is a CCD image sensor with 24x24 um pixel size, offering 2084 (H) x 2085 (V) resolution. It operates b/w -70 °C to 50°C, providing a dynamic range of 87.5 dB and spectral response of 300-1200 nm. Ideal for full-frame applications requiring high-quality imaging at a data rate of 3 Mbps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,610 parts In-Stock

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Vyrian

USA . 350 parts In-Stock

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350

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TANS Electronics

Latvia . 7,815 parts In-Stock

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SupplyDigital Components

Austria . 4,161 parts In-Stock

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Problanco Electronics

Mexico . 1,491 parts In-Stock

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UHIMA Technologies

Türkiye . 397 parts In-Stock

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397

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Corphita

USA . 380 parts In-Stock

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Corohmni

South Africa . 216 parts In-Stock

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Kulean Microsystems

USA . 80 parts In-Stock

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Overview

Capture stunning images with the KAF-4320-AAA-JP-B2 by Onsemi, a top-of-the-line image sensor that guarantees exceptional quality and performance. Manufactured by Onsemi, a trusted name in the industry, this sensor is perfect for a wide range of applications including surveillance systems, industrial imaging, and scientific research. With its high dynamic range and superior pixel size, this sensor ensures crystal-clear images even in challenging conditions. Experience the value and benefits of this advanced technology with the KAF-4320-AAA-JP-B2, where innovation meets reliability.

Feature Benefit Bullets

Pixel Size (um): 24X24

The small pixel size of 24X24 um allows for high resolution imaging, capturing detailed images with clarity.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image output, making this image sensor a reliable choice for imaging applications.

Maximum Operating Temperature: 50 °C

With a maximum operating temperature of 50 °C, this image sensor can withstand higher temperature environments without compromising performance.

Minimum Operating Temperature: -70 °C

The wide range of minimum operating temperature at -70 °C enables this sensor to be used in extreme cold conditions without any issues.

Dynamic Range: 87.5 dB

The high dynamic range of 87.5 dB allows the sensor to capture a wide range of light intensities, resulting in accurate and detailed images.

Spectral Response (nm): 300-1200

With a spectral response ranging from 300 to 1200 nm, this sensor can capture a broad range of wavelengths, making it versatile for various imaging needs.

Data Rate: 3 Mbps

A high data rate of 3 Mbps ensures fast and efficient transmission of image data, ideal for applications that require real-time imaging.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection, ensuring stable performance even in demanding environments.

Array Type: FULL FRAME

The full-frame array type allows for maximum coverage and efficient imaging, capturing the entire field of view without any cropping or distortion.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature offers a secure and stable installation method, making it easy to integrate this image sensor into various devices or systems.

Technical Specifications

Image Sensors KAF-4320-AAA-JP-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Data Rate:

3 Mbps

Dynamic Range:

87.5 dB

Horizontal Pixel:

2084

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-70 Cel

Pixel Size (um):

24X24

Sensors or Transducers Type:

Spectral Response (nm):

300-1200

Termination Type:

SOLDER

Vertical Pixel:

2085

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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