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AR0132AT6R00XPEA0-DPBR1

Onsemi

AR0132AT6R00XPEA0-DPBR1 by Onsemi

Onsemi's AR0132AT6R00XPEA0-DPBR1 is a 1/3 inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 115dB dynamic range. Ideal for applications requiring high-quality digital imaging at up to 60fps frame rate in a compact surface-mount package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,256 parts In-Stock

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Digiode

USA . 2,043 parts In-Stock

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Native Components

USA . 992 parts In-Stock

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$12.890

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Northwest PG Solutions

USA . 1,778 parts In-Stock

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$14.179

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$12.761

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AZTECH Wire

Italy . 176 parts In-Stock

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$20.640

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SupplyDigital Components

Austria . 4,171 parts In-Stock

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Problanco Electronics

Mexico . 4,011 parts In-Stock

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Corphita

USA . 505 parts In-Stock

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Corohmni

South Africa . 478 parts In-Stock

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Kulean Microsystems

USA . 467 parts In-Stock

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UHIMA Technologies

Türkiye . 252 parts In-Stock

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TANS Electronics

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Overview

Capture every detail with the AR0132AT6R00XPEA0-DPBR1 image sensor by Onsemi. Known for its superior quality and precision, Onsemi delivers cutting-edge technology that meets the highest industry standards. This sensor is perfect for a wide range of applications, from surveillance cameras to automotive systems, providing crystal-clear images with exceptional clarity and accuracy. Elevate your products with the unbeatable value and performance that the AR0132AT6R00XPEA0-DPBR1 offers, setting you apart from the competition and exceeding customer expectations.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images and better low light performance.

Maximum Supply Voltage: 1.95 V

Higher maximum supply voltage allows for flexibility in power supply options.

Master Clock: 50 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 9 inch

Compact and slim body width for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor type provides low power consumption and high image quality.

Output Range: 0.40-1.50V

Wide output voltage range for flexibility in interfacing with other components.

Maximum Operating Current: 130 mA

Low operating current for energy efficiency and reduced heat generation.

Dynamic Range: 115 dB

High dynamic range allows for capturing images with both bright and dark areas accurately.

Optical Format (inch): 1/3

Common optical format for compatibility with a wide range of lenses.

Output Interface Type: 2-WIRE INTERFACE

Two-wire interface simplifies connectivity and data transfer.

Frame Rate: 60 fps

High frame rate for smooth video recording and fast moving object capture.

Technical Specifications

Image Sensors AR0132AT6R00XPEA0-DPBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

115 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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