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KAI-16050-PXA-JD-B1

Onsemi

KAI-16050-PXA-JD-B1 by Onsemi

Onsemi's KAI-16050-PXA-JD-B1 is a 5.5X5.5 um CCD image sensor with 4896x3264 pixels, offering a dynamic range of 64 dB. It operates at temperatures ranging from -50 to 70 °C and requires a 15V power supply. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,397 parts In-Stock

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Digiode

USA . 1,117 parts In-Stock

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SupplyDigital Components

Austria . 5,401 parts In-Stock

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Problanco Electronics

Mexico . 4,614 parts In-Stock

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Kulean Microsystems

USA . 3,697 parts In-Stock

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TANS Electronics

Latvia . 2,970 parts In-Stock

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Corphita

USA . 2,222 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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UHIMA Technologies

Türkiye . 220 parts In-Stock

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Overview

Capture every moment in stunning detail with the KAI-16050-PXA-JD-B1 Image Sensor by Onsemi. Renowned for their superior quality and innovative technology, Onsemi's image sensors are trusted by professionals worldwide. Perfect for a wide range of applications including security systems, medical imaging, and industrial automation, this sensor delivers exceptional performance and clarity. Experience the value and benefits of precise imaging with the KAI-16050-PXA-JD-B1, and never miss a beat again.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size of 5.5X5.5 um allows for high-resolution image capture, making this sensor suitable for detailed imaging applications.

Body Width: 45.34 inch

The compact body width of 45.34 inches enables easy integration into various devices or systems without taking up too much space.

Power Supplies (V): 15

Operating at 15 volts provides a stable power supply for the sensor to ensure consistent and reliable performance.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being an image sensor with CCD technology, this product offers high-quality image output with excellent sensitivity and low noise levels.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easier to mount and align the sensor in a system, improving overall usability.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this sensor can function reliably even in relatively high-temperature environments.

Horizontal Pixel: 4896

The high horizontal pixel count of 4896 contributes to the sensor's ability to capture detailed and sharp images with excellent clarity.

Minimum Operating Temperature: -50 °C

The impressive minimum operating temperature of -50 °C allows the sensor to be used in a wide range of environmental conditions without compromising performance.

Dynamic Range: 64 dB

The wide dynamic range of 64 dB ensures that the sensor can distinguish between subtle differences in light and shadow, resulting in high-quality, well-exposed images.

Vertical Pixel: 3264

With a vertical pixel count of 3264, this sensor can capture images with excellent resolution and detail, especially in the vertical dimension.

Body Length/Diameter: 47.24 mm

The compact body length of 47.24 mm makes this sensor easy to handle and install, further enhancing its usability in various applications.

Termination Type: SOLDER

The solder termination type simplifies the integration process by providing a secure and reliable connection to other components or circuitry.

Array Type: INTERLINE

The interline array type offers fast readout speeds and efficient image processing capabilities, making this sensor suitable for high-speed imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the sensor onto PCBs or other surfaces, ensuring stability and durability.

Technical Specifications

Image Sensors KAI-16050-PXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Length/Diameter:

47.24 mm

Dynamic Range:

64 dB

Horizontal Pixel:

4896

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

3264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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