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AR0147ATSC00XUEG0-TRBR

Onsemi

AR0147ATSC00XUEG0-TRBR by Onsemi

Onsemi's AR0147ATSC00XUEG0-TRBR is a 3x3 um CMOS image sensor with 1344H x 968V pixels, offering a dynamic range of 140 dB. Operating at -40 to 110 °C, it has a max supply voltage of 1.26 V and output interface type of 2-WIRE INTERFACE. Ideal for applications requiring high-resolution imaging and low-light sensitivity in compact devices.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,774 parts In-Stock

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Digiode

USA . 2,500 parts In-Stock

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AZTECH Wire

Italy . 268 parts In-Stock

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$19.200

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Native Components

USA . 82 parts In-Stock

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$92.279

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$88.588

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Northwest PG Solutions

USA . 1,144 parts In-Stock

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$101.507

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SupplyDigital Components

Austria . 7,613 parts In-Stock

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Problanco Electronics

Mexico . 6,585 parts In-Stock

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TANS Electronics

Latvia . 6,010 parts In-Stock

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Corphita

USA . 1,925 parts In-Stock

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Kulean Microsystems

USA . 1,112 parts In-Stock

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Corohmni

South Africa . 99 parts In-Stock

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UHIMA Technologies

Türkiye . 24 parts In-Stock

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Overview

Capture every moment in stunning clarity with the AR0147ATSC00XUEG0-TRBR by Onsemi. As a leader in image sensor technology, Onsemi delivers top-notch quality and reliability. This image sensor is perfect for a wide range of applications, from security cameras to automotive systems. With its high resolution and advanced features, this product offers unmatched value and performance. Trust Onsemi to provide you with the best imaging solutions on the market.

Feature Benefit Bullets

Pixel Size (um): 3X3

Smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications requiring detailed imagery.

Maximum Supply Voltage: 1.26 V

This higher voltage allows for optimal performance of the image sensor, ensuring reliable operation.

Master Clock: 50 MHz

Higher master clock frequency enables faster data readout and processing, leading to improved overall performance.

Maximum Operating Temperature: 110 °C

Higher maximum operating temperature provides versatility in various environments, making this image sensor suitable for a wide range of applications.

Dynamic Range: 140 dB

High dynamic range allows the image sensor to capture a wide range of light intensities accurately, resulting in high-quality images with details in both bright and dark areas.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and allows for easy integration with other devices, enhancing the usability of this image sensor.

Technical Specifications

Image Sensors AR0147ATSC00XUEG0-TRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

7 inch

Body Height:

1.5 mm

Body Length/Diameter:

8 mm

Dynamic Range:

140 dB

Frame Rate:

60 fps

Horizontal Pixel:

1344

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

540 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

30.7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

968

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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