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NOIS1SC1000A-HHC

Onsemi

NOIS1SC1000A-HHC by Onsemi

NOIS1SC1000A-HHC by Onsemi is a 1024x1024 CMOS image sensor with 15x15 um pixel size. It outputs analog voltage at 11 fps with a max operating current of 60.8 mA. Housed in a ceramic package, it is ideal for surface mount applications in frame array setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 12,462 parts In-Stock

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Digiode

USA . 1,696 parts In-Stock

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AZTECH Wire

Italy . 429 parts In-Stock

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$15.870

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Problanco Electronics

Mexico . 4,275 parts In-Stock

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SupplyDigital Components

Austria . 3,674 parts In-Stock

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TANS Electronics

Latvia . 1,760 parts In-Stock

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Kulean Microsystems

USA . 711 parts In-Stock

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Corohmni

South Africa . 487 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 335 parts In-Stock

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Overview

Capture stunning images with the NOIS1SC1000A-HHC by Onsemi, a leading manufacturer in image sensor technology. This high-quality CMOS sensor boasts a 15x15 um pixel size and a square body shape, making it ideal for a wide range of applications. From security cameras to medical imaging devices, this sensor delivers crisp, clear images with an analog voltage output. With a maximum operating current of 60.8 mA and a frame rate of 11 fps, this sensor offers exceptional value and performance for all your imaging needs. Trust Onsemi for superior quality and reliability in every shot.

Feature Benefit Bullets

Pixel Size (um): 15X15

Smaller pixel size means higher resolution and better image quality for detailed images.

Body Width: 29.21 inch

Compact size allows for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for low power consumption and high image quality.

Body Height: 4.17 mm

Low profile design enables sleek and slim device designs.

Package Shape or Style: SQUARE

Square shape is versatile and allows for easy mounting and integration.

Horizontal Pixel: 1024

High horizontal pixel count for detailed and sharp images.

Output Type: ANALOG VOLTAGE

Analog voltage output is commonly used and compatible with many systems.

Maximum Operating Current: 60.8 mA

Low operating current for energy-efficient performance.

Housing: CERAMIC

Ceramic housing offers durability and protection for the sensor.

Vertical Pixel: 1024

High vertical pixel count for detailed and sharp images.

Body Length/Diameter: 29.21 mm

Compact size for easy integration and space-saving designs.

Termination Type: SOLDER

Solder termination for reliable and secure connections.

Frame Rate: 11 fps

Decent frame rate for smooth and clear video footage.

Array Type: FRAME

Frame array type for organized and efficient image capture.

Mounting Feature: SURFACE MOUNT

Surface mount for easy and secure installation on printed circuit boards.

Technical Specifications

Image Sensors NOIS1SC1000A-HHC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.21 inch

Body Height:

4.17 mm

Body Length/Diameter:

29.21 mm

Frame Rate:

11 fps

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

60.8 mA

Optical Format (inch):

1

Output Type:

Package Shape or Style:

Pixel Size (um):

15X15

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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