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NOIS1SM0250S-HWC

Onsemi

NOIS1SM0250S-HWC by Onsemi

NOIS1SM0250S-HWC by Onsemi is a 25x25 um CMOS image sensor with 512x512 pixels, offering an 8 MHz master clock and 74 dB dynamic range. Ideal for applications requiring high-resolution imaging at temperatures ranging from 0 to 65 °C, it outputs analog voltage in the range of 1-4.25V.

Median Price

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Lifecycle Status

Suppliers In-Stock

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Digiode

USA . 1,136 parts In-Stock

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Vyrian

USA . 523 parts In-Stock

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Problanco Electronics

Mexico . 5,353 parts In-Stock

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SupplyDigital Components

Austria . 4,876 parts In-Stock

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Kulean Microsystems

USA . 3,964 parts In-Stock

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TANS Electronics

Latvia . 1,195 parts In-Stock

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Corphita

USA . 1,075 parts In-Stock

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UHIMA Technologies

Türkiye . 517 parts In-Stock

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Corohmni

South Africa . 225 parts In-Stock

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Overview

Experience unparalleled clarity and precision with the NOIS1SM0250S-HWC Image Sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology that exceeds industry standards. Ideal for a wide range of applications, this sensor offers high-performance imaging capabilities with a dynamic range of 74 dB and a frame rate of 29 fps. Unlock endless possibilities with this innovative product, providing unmatched value and benefits to customers looking for exceptional image sensor solutions.

Feature Benefit Bullets

Pixel Size (um): 25X25

Smaller pixel size allows for higher resolution images to be captured, resulting in clearer and more detailed pictures.

Master Clock: 8 MHz

High master clock frequency enables fast data processing and high-speed image capturing, making the sensor suitable for applications requiring quick image capture.

Body Width: 29.2 inch

Compact body width makes the sensor suitable for applications where space is limited and a smaller form factor is required.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption, high sensitivity, and high-quality image output, making them a popular choice in various imaging applications.

Body Height: 17.77 mm

The moderate body height allows for easy integration and mounting in different devices and systems.

Package Shape or Style: SQUARE

Square package shape provides a more uniform and symmetrical design, facilitating easier integration and alignment in imaging systems.

Maximum Operating Temperature: 65 °C

Wide operating temperature range ensures the sensor can be used in various environmental conditions without compromising performance.

Horizontal Pixel: 512

Higher horizontal pixel count allows for wider image capture, providing more detailed and comprehensive pictures.

Output Range: 1-4.25V

Wide output voltage range offers flexibility in signal processing and compatibility with different types of electronic circuits and devices.

Output Type: ANALOG VOLTAGE

Analog voltage output simplifies signal processing and interfacing with other analog systems, making the sensor suitable for a wide range of applications.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance in colder environments, making the sensor versatile and suitable for various applications.

Housing: ALUMINIUM

Aluminum housing provides durability, thermal stability, and light weight, making the sensor robust and suitable for long-term use in different conditions.

Dynamic Range: 74 dB

High dynamic range allows the sensor to capture a wide range of light intensities, resulting in high-quality images with accurate color reproduction.

Vertical Pixel: 512

Higher vertical pixel count enables taller image captures, enhancing the overall image resolution and detail.

Body Length/Diameter: 29.2 mm

Moderate body length or diameter allows for easy integration and mounting in various devices and systems, offering versatility in application.

Data Rate: 8 Mbps

High data rate enables fast and efficient data transfer, ensuring real-time image processing and transmission for time-sensitive applications.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection between the sensor and external components, ensuring stable performance in different operating conditions.

Frame Rate: 29 fps

High frame rate allows for smooth and fluid video capture, making the sensor ideal for applications requiring high-speed motion detection or analysis.

Array Type: FRAME

Frame array type offers a structured grid arrangement of pixels, allowing for organized and systematic image capture for accurate image processing and analysis.

Mounting Feature: SURFACE MOUNT

Surface mounting feature provides easy and convenient installation on PCBs and other devices, simplifying the integration process for various applications.

Technical Specifications

Image Sensors NOIS1SM0250S-HWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.2 inch

Body Height:

17.77 mm

Body Length/Diameter:

29.2 mm

Data Rate:

8 Mbps

Dynamic Range:

74 dB

Frame Rate:

29 fps

Horizontal Pixel:

512

Housing:

ALUMINIUM

Master Clock:

8 MHz

Mounting Feature:

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

25X25

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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