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NOIS1SM1000S-HWC

Onsemi

NOIS1SM1000S-HWC by Onsemi

NOIS1SM1000S-HWC by Onsemi is a 1024x1024 CMOS image sensor with 15x15 um pixel size. Operating temperature range from -40 to 85 °C, outputting analog voltage at 11 fps. Ideal for frame array applications requiring surface mount housing in ceramic package.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 2,306 parts In-Stock

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Digiode

USA . 1,911 parts In-Stock

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TANS Electronics

Latvia . 7,792 parts In-Stock

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Problanco Electronics

Mexico . 6,528 parts In-Stock

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Kulean Microsystems

USA . 4,870 parts In-Stock

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SupplyDigital Components

Austria . 1,560 parts In-Stock

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UHIMA Technologies

Türkiye . 422 parts In-Stock

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Corphita

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Corohmni

South Africa . 53 parts In-Stock

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Overview

Experience unparalleled image quality and performance with the NOIS1SM1000S-HWC by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that set new standards for clarity and precision. Ideal for a wide range of applications, this sensor offers exceptional value and benefits to customers looking to enhance their imaging capabilities. Trust Onsemi to provide you with top-of-the-line technology that will take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 15X15

Smaller pixel size allows for higher resolution images with better detail.

Body Width: 29.21 inch

Compact size makes this sensor suitable for small electronic devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for low power consumption and high image quality.

Body Height: 4.17 mm

Low profile design enables easy integration into slim devices.

Package Shape or Style: SQUARE

Square shape simplifies mounting and alignment in electronic assemblies.

Maximum Operating Temperature: 85 °C

Wide temperature range allows for use in different environmental conditions.

Horizontal Pixel: 1024

Higher horizontal pixels result in sharper and more detailed images.

Output Type: ANALOG VOLTAGE

Analog output provides compatibility with a wide range of devices and systems.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme cold conditions without impacting performance.

Maximum Operating Current: 60.8 mA

Low operating current helps in reducing power consumption of the overall system.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability for reliable performance.

Vertical Pixel: 1024

Higher vertical pixels enhance the resolution and quality of captured images.

Body Length/Diameter: 29.21 mm

Compact and symmetric design facilitates easy placement and installation.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections.

Frame Rate: 11 fps

Decent frame rate enables smooth video recording and live streaming.

Array Type: FRAME

Frame array configuration offers high image capture efficiency and quality.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies PCB assembly and reduces footprint requirements.

Technical Specifications

Image Sensors NOIS1SM1000S-HWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.21 inch

Body Height:

4.17 mm

Body Length/Diameter:

29.21 mm

Frame Rate:

11 fps

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

60.8 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Type:

Package Shape or Style:

Pixel Size (um):

15X15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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