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NOIS1SM0250A-HWC

Onsemi

NOIS1SM0250A-HWC by Onsemi

NOIS1SM0250A-HWC by Onsemi is an image sensor with 25x25 um pixel size, 8 MHz master clock, and 5V power supply. Ideal for applications requiring a CMOS image sensor with a square package style, offering a dynamic range of 74 dB and operating temperatures from 0 to 65 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,326 parts In-Stock

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Vyrian

USA . 1,270 parts In-Stock

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TANS Electronics

Latvia . 8,072 parts In-Stock

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SupplyDigital Components

Austria . 7,074 parts In-Stock

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Problanco Electronics

Mexico . 6,847 parts In-Stock

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Kulean Microsystems

USA . 4,580 parts In-Stock

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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Corohmni

South Africa . 409 parts In-Stock

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Corphita

USA . 402 parts In-Stock

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Overview

Experience crystal-clear images like never before with the NOIS1SM0250A-HWC by Onsemi. Crafted by a trusted manufacturer, this image sensor boasts top-notch quality and reliability. Perfect for a wide range of applications, this sensor offers unmatched value with its high performance and precision. Elevate your projects with the cutting-edge technology of the NOIS1SM0250A-HWC and unlock a world of possibilities in imaging solutions.

Feature Benefit Bullets

Pixel Size (um): 25X25

Small pixel size allows for high resolution images with fine details.

Master Clock: 8 MHz

High master clock frequency enables fast data processing and high speed image capture.

Body Width: 29.2 inch

Compact body width makes it easy to integrate into various devices and systems.

Power Supplies (V): 5

Low power supply voltage ensures energy efficiency.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers high quality image capture with low power consumption.

Body Height: 17.77 mm

Low body height allows for slim design and flexibility in device integration.

Package Shape or Style: SQUARE

Square package shape provides easy mounting and alignment in systems.

Maximum Operating Temperature: 65 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 512

High horizontal pixel count enables detailed image capture and processing.

Output Range: 1-4.25V

Wide output voltage range provides flexibility in signal processing and compatibility with different systems.

Output Type: ANALOG VOLTAGE

Analog voltage output allows for easy interfacing with analog signal processing circuits.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold environments.

Housing: ALUMINIUM

Aluminum housing provides durability and thermal conductivity for optimal sensor performance.

Dynamic Range: 74 dB

High dynamic range allows for capturing images with both bright and dark areas accurately.

Vertical Pixel: 512

High vertical pixel count ensures detailed image capture in both horizontal and vertical dimensions.

Body Length/Diameter: 29.2 mm

Compact body length/diameter allows for efficient use of space in device integration.

Data Rate: 8 Mbps

High data rate enables fast transmission of image data for real-time processing.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for long-term use.

Frame Rate: 29 fps

High frame rate allows for smooth video capture and playback.

Array Type: FRAME

Frame array type enables simultaneous capture of multiple image frames for enhanced image quality.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation on circuit boards or PCBs.

Technical Specifications

Image Sensors NOIS1SM0250A-HWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.2 inch

Body Height:

17.77 mm

Body Length/Diameter:

29.2 mm

Data Rate:

8 Mbps

Dynamic Range:

74 dB

Frame Rate:

29 fps

Horizontal Pixel:

512

Housing:

ALUMINIUM

Master Clock:

8 MHz

Mounting Feature:

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

25X25

Power Supplies (V):

5

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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