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AR0835HS3C12SUAA0-DR

Onsemi

AR0835HS3C12SUAA0-DR by Onsemi

The Onsemi AR0835HS3C12SUAA0-DR is a 1/3.2 inch CMOS image sensor with 1.40um pixel size, offering a dynamic range of 64 dB and operating at a max supply voltage of 1.3V. It features a digital voltage output interface, suitable for applications requiring high-speed imaging such as surveillance cameras and industrial machine vision systems.

Median Price

$13.615

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 7,200 parts In-Stock

1+ parts

$17.110

100+ parts

$16.770

1k+ parts

$16.430

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7,200

$17.110

$16.770

$16.430

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Farnell

UK . 7,356 parts In-Stock

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$10.120

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$10.120

Distributors (In-Stock)

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Flip Electronics

USA . 3,819 parts In-Stock

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$7.440

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3,819

$7.440

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Digiode

USA . 299 parts In-Stock

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$11.884

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299

$11.884

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Vyrian

USA . 4,262 parts In-Stock

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VNN

France . 1,971 parts In-Stock

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Nova Conductors

Japan . 67 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,985 parts In-Stock

1+ parts

$8.600

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6,985

$8.600

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Corohmni

South Africa . 379 parts In-Stock

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$10.120

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379

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Corphita

USA . 1,669 parts In-Stock

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$11.259

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AZTECH Wire

Italy . 260 parts In-Stock

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$15.900

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 7,695 parts In-Stock

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Kulean Microsystems

USA . 6,171 parts In-Stock

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Continental Prestige Electronics

USA . 3,678 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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TANS Electronics

Latvia . 1,262 parts In-Stock

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1,262

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Problanco Electronics

Mexico . 667 parts In-Stock

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UHIMA Technologies

Türkiye . 382 parts In-Stock

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382

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Argo Parts USA

USA . 320 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the AR0835HS3C12SUAA0-DR image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi is known for its cutting-edge technology and innovative solutions. This image sensor, belonging to the category of Image Sensors, offers exceptional performance and versatility for a wide range of applications. With its high-quality construction and advanced features, customers can expect superior image quality, precise measurements, and seamless integration. Elevate your projects with the AR0835HS3C12SUAA0-DR and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Pixel Size (um): 1.40

Larger pixel size helps in capturing more light, resulting in better image quality and improved low-light performance.

Maximum Supply Voltage: 1.3 V

Efficient power consumption with a moderate maximum supply voltage.

Body Width: 10 inch

Compact design making it suitable for various applications and easy integration.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensors are known for their low power consumption and high integration capabilities.

Body Height: 1.325 mm

Low profile design for easy installation in different devices.

Package Shape or Style: SQUARE

Square package shape allows for better utilization of space and easier PCB layout.

Minimum Supply Voltage: 1.14 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and interfacing with other digital systems.

Maximum Operating Current: 175 mA

Moderate operating current ensures efficient power usage and less heat generation.

Housing: CERAMIC

Ceramic housing provides durability, thermal stability, and protection for the sensor.

Dynamic Range: 64 dB

High dynamic range helps in capturing both bright and dark areas accurately in the image.

Body Length/Diameter: 10 mm

Compact body size for easy integration and placement within devices.

Optical Format (inch): 1/3.2

Standard optical format for compatibility with various lens options and imaging systems.

Termination Type: SOLDER

Solder termination ensures secure electrical connections for reliable operation.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connection and communication with external devices.

Frame Rate: 120 fps

High frame rate enables smooth and detailed video capture and fast motion tracking.

Array Type: FULL FRAME

Full frame array ensures efficient light capture across the entire image sensor area.

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy and secure mounting on PCBs.

Technical Specifications

Image Sensors AR0835HS3C12SUAA0-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 2.5 TO 3.1 V ANALOG SUPPLY VOLTAGE

Array Type:

FULL FRAME

Body Width:

10 inch

Body Height:

1.325 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

120 fps

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

175 mA

Optical Format (inch):

1/3.2

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

1.40

Sensors or Transducers Type:

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.14 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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