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AR0835HS3C12SUAA0-DP

Onsemi

AR0835HS3C12SUAA0-DP by Onsemi

Onsemi's AR0835HS3C12SUAA0-DP is a 1/3.2 inch CMOS image sensor with 1.40um pixel size and 27 MHz master clock. It operates at 1.14-1.3V, offers digital voltage output, and has a dynamic range of 64dB. Ideal for applications requiring high-speed imaging such as surveillance cameras or industrial machine vision systems due to its 120 fps frame rate and full-frame array design.

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Lifecycle Status

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4

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Flip Electronics

USA . 75,000 parts In-Stock

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AZTECH Wire

Italy . 480 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 6,500 parts In-Stock

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Kulean Microsystems

USA . 5,964 parts In-Stock

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SupplyDigital Components

Austria . 2,116 parts In-Stock

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Corphita

USA . 1,114 parts In-Stock

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UHIMA Technologies

Türkiye . 977 parts In-Stock

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Problanco Electronics

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Native Components

USA . 465 parts In-Stock

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Corohmni

South Africa . 434 parts In-Stock

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Northwest PG Solutions

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Latvia . 311 parts In-Stock

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Overview

Elevate your imaging experience with the AR0835HS3C12SUAA0-DP by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-quality products that exceed industry standards. Perfect for a wide range of applications, this cutting-edge sensor offers unparalleled value and benefits to customers. Explore new possibilities in imaging technology with the AR0835HS3C12SUAA0-DP and witness the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um): 1.40

A smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications requiring detailed imaging.

Maximum Supply Voltage: 1.3 V

The low maximum supply voltage requirement of 1.3V allows for efficient power consumption and compatibility with a wide range of power sources, making this image sensor energy-efficient.

Master Clock: 27 MHz

With a high master clock frequency of 27 MHz, this image sensor can capture fast-moving objects with precision and minimal motion blur, making it ideal for applications that require high-speed imaging.

Body Width: 10 inch

The compact body width of 10 inches allows for easy integration into various systems and devices, making this image sensor versatile and adaptable for different applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, this product offers low power consumption, high sensitivity, and high-speed operation, making it a reliable choice for capturing high-quality images in various lighting conditions.

Dynamic Range: 64 dB

A wide dynamic range of 64 dB allows this image sensor to capture both bright and dark areas in an image with detail and accuracy, making it suitable for applications that require a high level of image quality.

Technical Specifications

Image Sensors AR0835HS3C12SUAA0-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FULL FRAME

Body Width:

10 inch

Body Height:

1.325 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

120 fps

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

175 mA

Optical Format (inch):

1/3.2

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

1.40

Sensors or Transducers Type:

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.14 V

Termination Type:

SOLDER

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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