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CYIL2SM1300AA-GZDC

Onsemi

CYIL2SM1300AA-GZDC by Onsemi

CYIL2SM1300AA-GZDC by Onsemi is an Image Sensor with 14x14 um pixel size, 315 MHz master clock, and 1280x1024 resolution. Ideal for digital imaging applications requiring high sensitivity and a wide dynamic range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 882 parts In-Stock

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Digiode

USA . 265 parts In-Stock

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Problanco Electronics

Mexico . 7,994 parts In-Stock

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TANS Electronics

Latvia . 6,553 parts In-Stock

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Northwest PG Solutions

USA . 1,555 parts In-Stock

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Kulean Microsystems

USA . 1,434 parts In-Stock

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Native Components

USA . 695 parts In-Stock

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695

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SupplyDigital Components

Austria . 655 parts In-Stock

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Corphita

USA . 531 parts In-Stock

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Corohmni

South Africa . 130 parts In-Stock

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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Overview

Capture breathtaking images with the CYIL2SM1300AA-GZDC image sensor by Onsemi. Known for their high-quality products, Onsemi delivers superior performance and reliability in every product they create. This image sensor is perfect for a wide range of applications, from security systems to medical imaging. Experience crystal-clear visuals and precise details with the CYIL2SM1300AA-GZDC, providing unparalleled value and benefits to customers looking for top-notch imaging solutions.

Feature Benefit Bullets

Pixel Size (um): 14X14

The small pixel size allows for high resolution images to be captured with this sensor.

Maximum Supply Voltage: 2.625 V

The high maximum supply voltage ensures stable and reliable operation of the sensor.

Master Clock: 315 MHz

The high master clock frequency allows for fast and efficient data processing.

Body Width: 30.5 inch

The compact body width makes it easy to integrate this sensor into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption and high sensitivity for optimal image quality.

Body Height: 3.75 mm

The low body height makes this sensor suitable for applications where space is limited.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into electronic systems.

Minimum Supply Voltage: 2.375 V

The low minimum supply voltage helps in reducing power consumption of the sensor.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows for use in harsh environmental conditions.

Horizontal Pixel: 1280

The high horizontal pixel count enables high resolution images to be captured.

Output Type: DIGITAL VOLTAGE

The digital voltage output makes it easy to interface this sensor with digital systems.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures reliable performance even in cold environments.

Housing: CERAMIC

The ceramic housing provides durability and protection to the sensor.

Dynamic Range: 90 dB

The high dynamic range enables the sensor to capture a wide range of light intensities accurately.

Vertical Pixel: 1024

The high vertical pixel count further enhances the resolution and detail of captured images.

Body Length/Diameter: 35.5 mm

The moderate body length/diameter makes this sensor versatile for different applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable electrical connections.

Output Interface Type: 3-WIRE INTERFACE

The 3-wire interface simplifies the integration of this sensor into electronic systems.

Frame Rate: 500 fps

The high frame rate allows for capturing fast-moving objects with clarity.

Array Type: FULL FRAME

The full frame array type ensures that the entire image is captured without cropping or distortion.

Sensitivity (V/lx.s): 10.16 V/lx.s

The high sensitivity enables the sensor to capture clear images even in low light conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature provides secure and stable installation of the sensor in electronic devices.

Technical Specifications

Image Sensors CYIL2SM1300AA-GZDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SNAPSHOT SHUTTER

Array Type:

FULL FRAME

Body Width:

30.5 inch

Body Height:

3.75 mm

Body Length/Diameter:

35.5 mm

Dynamic Range:

90 dB

Frame Rate:

500 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

315 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Sensitivity (V/lx.s):

10.16 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

2.625 V

Minimum Supply Voltage:

2.375 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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