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CYIL1SM1300AA-GBC

Onsemi

CYIL1SM1300AA-GBC by Onsemi

CYIL1SM1300AA-GBC by Onsemi is an Image Sensor with 14x14 um pixel size, 1280 horizontal pixels, and 1024 vertical pixels. It operates at a max supply voltage of 6V and has a master clock of 20 MHz. Ideal for applications requiring high-resolution imaging with a frame rate of up to 450 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 908 parts In-Stock

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Digiode

USA . 812 parts In-Stock

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Native Components

USA . 51 parts In-Stock

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$13.532

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Northwest PG Solutions

USA . 1,681 parts In-Stock

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Kulean Microsystems

USA . 6,232 parts In-Stock

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TANS Electronics

Latvia . 5,385 parts In-Stock

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Problanco Electronics

Mexico . 5,246 parts In-Stock

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SupplyDigital Components

Austria . 5,074 parts In-Stock

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Corphita

USA . 1,510 parts In-Stock

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UHIMA Technologies

Türkiye . 455 parts In-Stock

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Corohmni

South Africa . 341 parts In-Stock

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Overview

Elevate your imaging game with the CYIL1SM1300AA-GBC by Onsemi. Known for their cutting-edge technology and superior quality, Onsemi delivers top-of-the-line image sensors that set industry standards. Whether you're in photography, robotics, or security systems, this image sensor offers unmatched performance, clarity, and precision. With a wide range of applications and unbeatable value, the CYIL1SM1300AA-GBC is the ultimate choice for customers looking to take their projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 14X14

The small pixel size allows for high resolution and detailed images to be captured, making this image sensor suitable for applications requiring clear and crisp images.

Maximum Supply Voltage: 6 V

With a high maximum supply voltage, this image sensor can handle a wide range of power inputs, providing flexibility in different operating conditions.

Master Clock: 20 MHz

The high master clock frequency of 20 MHz enables fast data processing and high-speed performance, making this image sensor ideal for applications that require rapid image capture and processing.

Body Width: 40.01 inch

The compact body width of 40.01 inch allows for easy integration into various devices and systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, high sensitivity, and good noise performance, making it a reliable choice for imaging applications.

Package Shape or Style: SQUARE

The square package shape provides a standardized form factor for easy mounting and integration into different systems and devices.

Minimum Supply Voltage: 3 V

The low minimum supply voltage requirement of 3 V ensures efficient power usage and compatibility with a wide range of power sources.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this image sensor can withstand high-temperature environments, making it suitable for various industrial and outdoor applications.

Horizontal Pixel: 1280

The high horizontal pixel count of 1280 contributes to the overall image quality and resolution, allowing for detailed and high-definition images to be captured.

Output Range: 5V

The output range of 5V provides a standard voltage output for easy interfacing with other devices and systems, ensuring compatibility and ease of integration.

Output Type: ANALOG VOLTAGE

Analog voltage output allows for direct interface with analog signal processing circuitry, offering flexibility and compatibility with a wide range of systems and applications.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures reliable performance even in cold environments, making this image sensor suitable for a variety of operating conditions.

Maximum Operating Current: 50 mA

With a maximum operating current of 50 mA, this image sensor consumes low power, resulting in energy-efficient operation and extended battery life for portable devices.

Housing: CERAMIC

The ceramic housing offers durability and protection for the image sensor, ensuring reliable performance in harsh environments and demanding applications.

Dynamic Range: 62 dB

A high dynamic range of 62 dB allows the image sensor to capture a wide range of brightness levels with accuracy, making it suitable for applications with varying lighting conditions.

Vertical Pixel: 1024

The vertical pixel count of 1024 contributes to the overall image quality and resolution, allowing for detailed and high-definition images to be captured.

Body Length/Diameter: 40.01 mm

The compact body length/diameter of 40.01 mm allows for easy integration into various devices and systems without taking up too much space.

Optical Format (inch): 1.43

The optical format of 1.43 inches provides compatibility with a wide range of optics and lenses, allowing for versatility in image capturing and processing.

Data Rate: 40 Mbps

The high data rate of 40 Mbps enables fast and efficient transfer of image data, making this image sensor suitable for real-time imaging and high-speed applications.

Termination Type: SOLDER

The solder termination type allows for secure and reliable connections, ensuring stable performance and minimal signal loss during operation.

Output Interface Type: 3-WIRE INTERFACE

The 3-wire interface type provides a simple and standardized communication protocol for connecting with other devices, allowing for easy integration and compatibility.

Frame Rate: 450 fps

With a high frame rate of 450 fps, this image sensor can capture fast-moving objects and rapid motion with clarity and precision, making it ideal for high-speed imaging applications.

Array Type: FULL FRAME

Being a full-frame array type, this image sensor can capture a large field of view with uniform sensitivity, making it suitable for wide-angle imaging and panoramic applications.

Sensitivity (V/lx.s): 21.43 V/lx.s

The high sensitivity of 21.43 V/lx.s allows the image sensor to capture clear and detailed images even in low-light conditions, making it suitable for low-light imaging applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the image sensor onto PCBs and other surfaces, ensuring stable and reliable operation in various applications.

Technical Specifications

Image Sensors CYIL1SM1300AA-GBC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SHUTTER

Array Type:

FULL FRAME

Body Width:

40.01 inch

Body Height:

2.8 mm

Body Length/Diameter:

40.01 mm

Data Rate:

40 Mbps

Dynamic Range:

62 dB

Frame Rate:

450 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

20 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1.43

Output Interface Type:

3-WIRE INTERFACE

Output Range:

5V

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Sensitivity (V/lx.s):

21.43 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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