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KAI-08050-PBA-JD-AE

Onsemi

KAI-08050-PBA-JD-AE by Onsemi

KAI-08050-PBA-JD-AE by Onsemi is a 5.5x5.5 um CCD image sensor with 3296 (H) x 2472 (V) pixels, offering a dynamic range of 64 dB. This rectangular package sensor in 4/3 inch optical format is ideal for applications requiring high-quality imaging such as industrial machine vision and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,071 parts In-Stock

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Digiode

USA . 308 parts In-Stock

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TANS Electronics

Latvia . 8,284 parts In-Stock

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SupplyDigital Components

Austria . 6,685 parts In-Stock

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Problanco Electronics

Mexico . 4,025 parts In-Stock

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Kulean Microsystems

USA . 3,157 parts In-Stock

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Corphita

USA . 2,097 parts In-Stock

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Corohmni

South Africa . 222 parts In-Stock

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Capture every moment in stunning detail with the KAI-08050-PBA-JD-AE image sensor by Onsemi. Manufactured with precision and expertise, this CCD sensor offers unparalleled quality and performance. Ideal for a wide range of applications, this sensor delivers crisp images with a dynamic range of 64 dB. Whether you're in need of high-resolution photography or advanced machine vision systems, this sensor's 3296 x 2472 pixel resolution and 5.5um pixel size will exceed your expectations. Experience the value and benefits of this cutting-edge technology, designed to elevate your imaging experience to new heights.

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

The small pixel size allows for high resolution images with fine details.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture and low noise performance.

Package Shape or Style RECTANGULAR

The rectangular shape makes it easy to integrate the sensor into various devices and systems.

Horizontal Pixel 3296

High number of horizontal pixels provide detailed and sharp images.

Dynamic Range 64 dB

A high dynamic range ensures accurate representation of both bright and dark areas in the image.

Vertical Pixel 2472

High number of vertical pixels contribute to higher resolution and clarity in images.

Optical Format (inch) 4/3

The 4/3 inch optical format allows for compatibility with a wide range of lenses and accessories.

Termination Type SOLDER

Solder termination ensures secure and reliable connection with other components.

Array Type INTERLINE

Interline array design allows for faster readout speeds and reduced image lag.

Mounting Feature THROUGH HOLE MOUNT

Through hole mounting provides a sturdy and stable installation of the image sensor.

Technical Specifications

Image Sensors KAI-08050-PBA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

3296

Mounting Feature:

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

2472

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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