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KAI-16070-AXA-JD-AE

Onsemi

KAI-16070-AXA-JD-AE by Onsemi

Onsemi's KAI-16070-AXA-JD-AE image sensor features 7.4x7.4 um pixel size, 40 MHz master clock, and 4864 horizontal pixels. Ideal for applications requiring high-resolution imaging with a max supply voltage of 15.5 V and an optical format of 1.37 inch.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,382 parts In-Stock

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Digiode

USA . 1,273 parts In-Stock

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TANS Electronics

Latvia . 8,017 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 4,680 parts In-Stock

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Problanco Electronics

Mexico . 3,995 parts In-Stock

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SupplyDigital Components

Austria . 2,895 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 344 parts In-Stock

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Corohmni

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Overview

Unlock the power of cutting-edge technology with the KAI-16070-AXA-JD-AE image sensor by Onsemi. Known for their superior quality and reliability, Onsemi delivers unmatched performance in the field of image sensors. Ideal for a wide range of applications, this sensor offers exceptional clarity and precision, making it perfect for industries such as security, surveillance, and medical imaging. Experience the value of innovation with the KAI-16070-AXA-JD-AE and elevate your projects to new heights.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution and finer details in captured images.

Maximum Supply Voltage: 15.5 V

Higher supply voltage can provide better performance and signal-to-noise ratio.

Master Clock: 40 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 45.34 inch

Compact body width allows for easy integration into various imaging systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture and low noise performance.

Body Height: 3.61 mm

Low body height enables slim and compact camera designs.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides versatility in mounting options and space efficiency.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in power efficiency and extends battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environments.

Horizontal Pixel: 4864

High horizontal pixel count delivers detailed and sharp images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Dynamic Range: 70.5 dB

High dynamic range captures a wide range of light intensities accurately.

Vertical Pixel: 3232

Generous vertical pixel count allows for high-resolution image capture.

Body Length/Diameter: 47.24 mm

Compact body length/diameter facilitates easy integration into compact devices.

Optical Format (inch): 1.37

Standard optical format for compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the sensor.

Frame Rate: 8 fps

Decent frame rate for capturing moving subjects or fast-paced scenes.

Array Type: INTERLINE

Interline array type allows for fast readout and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature offers secure and stable installation in various systems.

Technical Specifications

Image Sensors KAI-16070-AXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS OPTICAL FORMAT OF 1.37 INCH

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

70.5 dB

Frame Rate:

8 fps

Horizontal Pixel:

4864

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.37

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3232

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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