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KAI-0340-AAA-CP-AE-DUAL

Onsemi

KAI-0340-AAA-CP-AE-DUAL by Onsemi

The Onsemi KAI-0340-AAA-CP-AE-DUAL is a 640x480 CCD image sensor with 7.4um pixel size, offering a dynamic range of 69dB. It operates b/w -50 to 70 °C, suitable for industrial imaging applications requiring high-quality images in varying conditions. The rectangular package style and through-hole mounting feature make it easy to integrate into systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,796 parts In-Stock

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Digiode

USA . 459 parts In-Stock

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459

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TANS Electronics

Latvia . 8,087 parts In-Stock

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Problanco Electronics

Mexico . 7,611 parts In-Stock

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SupplyDigital Components

Austria . 5,021 parts In-Stock

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Kulean Microsystems

USA . 4,143 parts In-Stock

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Corohmni

South Africa . 468 parts In-Stock

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468

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Corphita

USA . 365 parts In-Stock

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UHIMA Technologies

Türkiye . 281 parts In-Stock

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Overview

Capture stunning images with the KAI-0340-AAA-CP-AE-DUAL image sensor by Onsemi. Known for its superior quality and reliability, this sensor is perfect for applications requiring high-resolution imaging in low-light conditions. Whether you're designing a surveillance system, medical imaging device, or industrial inspection equipment, this sensor delivers exceptional performance and precise image capture. Trust Onsemi to provide cutting-edge technology that exceeds expectations and brings value to your projects. Choose the KAI-0340-AAA-CP-AE-DUAL for unparalleled image sensor excellence.

Feature Benefit Bullets

Pixel Size (um) 7.4X7.4

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage 15.25 V

Higher supply voltage allows for better performance and signal quality.

Body Width 12.45 inch

Larger body width provides more space for additional components and features.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD image sensor type ensures high-quality and accurate image capture.

Body Height 5.15 mm

Compact body height makes it suitable for smaller devices and applications.

Package Shape or Style RECTANGULAR

Rectangular package shape allows for easy integration and installation in various systems.

Minimum Supply Voltage 14.75 V

Lower minimum supply voltage helps in reducing power consumption and increasing efficiency.

Maximum Operating Temperature 70 °C

High maximum operating temperature ensures reliability and performance in various environmental conditions.

Horizontal Pixel 640

Higher number of horizontal pixels provide better image resolution and clarity.

Minimum Operating Temperature -50 °C

Low minimum operating temperature allows for usage in extreme cold environments.

Housing CERAMIC

Ceramic housing offers durability and protection against external factors.

Dynamic Range 69 dB

High dynamic range ensures accurate and detailed image capture in various lighting conditions.

Vertical Pixel 480

Higher number of vertical pixels provide better image quality and sharpness.

Body Length/Diameter 15.87 mm

Compact body length/diameter allows for easy integration and installation in tight spaces.

Optical Format (inch) 1/3

1/3 inch optical format is suitable for various imaging applications and provides good image quality.

Termination Type SOLDER

Solder termination type ensures secure and reliable connections for long-term usage.

Array Type INTERLINE

Interline array type offers fast readout and low noise for efficient image processing.

Mounting Feature THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation in different devices and systems.

Technical Specifications

Image Sensors KAI-0340-AAA-CP-AE-DUAL attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

12.45 inch

Body Height:

5.15 mm

Body Length/Diameter:

15.87 mm

Dynamic Range:

69 dB

Horizontal Pixel:

640

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.25 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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