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KAI-50140-AXA-JD-B2

Onsemi

KAI-50140-AXA-JD-B2 by Onsemi

KAI-50140-AXA-JD-B2 by Onsemi is an image sensor with 4.5X4.5 um pixel size, 60 MHz master clock, and 10440 horizontal pixels. It operates b/w -50 to 60 °C and has a max supply voltage of 15.5 V. Ideal for digital output applications in various industries due to its high dynamic range and frame array type design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,700 parts In-Stock

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Digiode

USA . 1,689 parts In-Stock

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1,689

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TANS Electronics

Latvia . 8,055 parts In-Stock

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Kulean Microsystems

USA . 6,314 parts In-Stock

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SupplyDigital Components

Austria . 1,718 parts In-Stock

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Corphita

USA . 1,577 parts In-Stock

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Problanco Electronics

Mexico . 1,089 parts In-Stock

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1,089

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UHIMA Technologies

Türkiye . 728 parts In-Stock

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Corohmni

South Africa . 485 parts In-Stock

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Overview

Capture life's most precious moments with the KAI-50140-AXA-JD-B2 by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-notch quality and reliability in every product. This advanced CCD sensor offers unparalleled performance with its high pixel resolution and wide dynamic range. Ideal for applications in security cameras, medical imaging, and industrial automation, this sensor ensures crisp, clear images in any environment. Elevate your projects with the KAI-50140-AXA-JD-B2 and experience the superior value and benefits that Onsemi brings to customers worldwide.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

With a small pixel size, this image sensor can capture high-resolution images with clear details.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage allows for flexibility in power supply options and can accommodate various voltage levels.

Master Clock: 60 MHz

A high master clock frequency of 60 MHz ensures fast data processing and efficient image capture.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, it offers high-quality image capture with low noise levels, making it suitable for a wide range of applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy integration and mounting in various devices and systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures efficient power consumption and extends the operational life of the image sensor.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature of 60 °C, this image sensor can withstand harsh environmental conditions.

Horizontal Pixel: 10440

The high horizontal pixel count of 10440 enables capturing detailed and high-resolution images with clarity.

Output Type: DIGITAL OUTPUT

The digital output type simplifies integration with digital systems and facilitates easy data processing and transfer.

Minimum Operating Temperature: -50 °C

With a low minimum operating temperature of -50 °C, this image sensor can operate in extreme cold environments.

Maximum Operating Current: 11 mA

The low maximum operating current helps in efficient power consumption and extends the battery life of devices using this image sensor.

Housing: GLASS

The glass housing provides durability and protection to the image sensor, ensuring long-term reliability and performance.

Dynamic Range: 60 dB

A high dynamic range of 60 dB allows for capturing images with a wide range of brightness levels, ensuring accurate and detailed image reproduction.

Vertical Pixel: 4800

The vertical pixel count of 4800 contributes to the overall image resolution and quality, enabling sharp and detailed image capture.

Termination Type: SOLDER

The solder termination type offers a secure and reliable connection for the image sensor, ensuring stable operation and data transfer.

Array Type: FRAME

Being a frame array type, this image sensor can capture full-frame images with precise details, making it suitable for various imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the integration of the image sensor into circuit boards and systems, providing a secure and stable mounting option.

Technical Specifications

Image Sensors KAI-50140-AXA-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Dynamic Range:

60 dB

Horizontal Pixel:

10440

Housing:

GLASS

Master Clock:

60 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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