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KAI-50140-AXA-JP-B1

Onsemi

KAI-50140-AXA-JP-B1 by Onsemi

KAI-50140-AXA-JP-B1 by Onsemi is an image sensor with 4.5x4.5 um pixel size, 60 MHz master clock, and 10440 horizontal pixels. It operates b/w -50 to 60 °C and has a dynamic range of 60 dB. Ideal for digital output applications requiring high-resolution imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,220 parts In-Stock

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Digiode

USA . 2,185 parts In-Stock

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AZTECH Wire

Italy . 307 parts In-Stock

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$18.320

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307

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Problanco Electronics

Mexico . 7,031 parts In-Stock

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Kulean Microsystems

USA . 5,990 parts In-Stock

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SupplyDigital Components

Austria . 3,956 parts In-Stock

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Corphita

USA . 1,618 parts In-Stock

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TANS Electronics

Latvia . 1,040 parts In-Stock

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UHIMA Technologies

Türkiye . 677 parts In-Stock

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Corohmni

South Africa . 108 parts In-Stock

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Overview

Capture every moment with crystal-clear precision using the KAI-50140-AXA-JP-B1 image sensor by Onsemi. With a pixel size of 4.5X4.5 um, this cutting-edge technology offers unparalleled quality and accuracy in capturing images. Whether you are a professional photographer or a tech enthusiast, this sensor is perfect for a wide range of applications such as digital cameras, medical imaging, and astronomy. Trust in Onsemi's reputation for excellence in image sensors and take your photography to the next level with the KAI-50140-AXA-JP-B1.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

The small pixel size allows for high resolution images to be captured, making this image sensor a good choice for detailed applications.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage provides flexibility in power supply options and ensures stable performance under varying voltage conditions.

Master Clock: 60 MHz

The high master clock frequency enables fast data readout and processing, making this image sensor suitable for high-speed imaging applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The CCD sensor type offers high image quality and low noise characteristics, making it ideal for applications that require high precision and sensitivity.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy integration into various devices and systems, making this image sensor versatile in its application possibilities.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures power efficiency and compatibility with a wide range of power sources, making this image sensor suitable for portable and battery-operated devices.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature tolerance allows for reliable performance in harsh environmental conditions, making this image sensor suitable for outdoor or industrial applications.

Horizontal Pixel: 10440

The high number of horizontal pixels results in detailed and high-resolution images, making this image sensor ideal for applications that require precision imaging.

Output Type: DIGITAL OUTPUT

The digital output format simplifies data processing and transmission, making this image sensor easy to integrate into digital systems and applications.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature tolerance ensures reliable performance even in extreme cold conditions, making this image sensor suitable for a wide range of environmental settings.

Maximum Operating Current: 11 mA

The low operating current consumption results in energy efficiency and longer battery life in portable devices that use this image sensor.

Housing: GLASS

The glass housing provides durability and protection for the sensitive components of the image sensor, ensuring long-term reliability and performance.

Dynamic Range: 60 dB

The high dynamic range allows the image sensor to capture a wide range of light intensities with detail and accuracy, making it suitable for diverse lighting conditions.

Vertical Pixel: 4800

The high number of vertical pixels enables detailed image capture in both horizontal and vertical dimensions, making this image sensor ideal for high-resolution imaging applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections in the device's circuitry, enhancing the image sensor's overall performance and longevity.

Array Type: FRAME

The frame array type allows for efficient data capture and processing, resulting in smooth and high-quality image output from this image sensor.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature enables easy and secure installation of the image sensor in circuit boards or devices, ensuring stable and reliable operation.

Technical Specifications

Image Sensors KAI-50140-AXA-JP-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Dynamic Range:

60 dB

Horizontal Pixel:

10440

Housing:

GLASS

Master Clock:

60 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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