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NOIH2SM1000T-HHC

Onsemi

NOIH2SM1000T-HHC by Onsemi

NOIH2SM1000T-HHC by Onsemi is a CMOS image sensor with 1024x1024 pixels, 18x18 um pixel size, and operates at temperatures from -40 to 85 °C. It has a digital voltage output range of 2.20-2.60V and requires a 3.3V power supply. Ideal for applications requiring high-resolution imaging in a compact square ceramic package for surface mount assembly.

Median Price

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Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,491 parts In-Stock

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Digiode

USA . 121 parts In-Stock

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Problanco Electronics

Mexico . 4,616 parts In-Stock

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TANS Electronics

Latvia . 4,368 parts In-Stock

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SupplyDigital Components

Austria . 3,047 parts In-Stock

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Corphita

USA . 1,762 parts In-Stock

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Kulean Microsystems

USA . 1,656 parts In-Stock

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Corohmni

South Africa . 240 parts In-Stock

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UHIMA Technologies

Türkiye . 15 parts In-Stock

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Overview

Enhance your imaging solutions with the high-quality NOIH2SM1000T-HHC Image Sensor by Onsemi. With a pixel size of 18X18 um and a digital voltage output type, this sensor delivers exceptional performance in a compact square package. Onsemi, a trusted manufacturer, ensures reliability and precision in every product, making it ideal for a wide range of applications. From industrial automation to automotive safety systems, this sensor offers value, benefits, and advantages that will elevate your projects to the next level. Upgrade your imaging capabilities today with the NOIH2SM1000T-HHC Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 18X18

The small pixel size allows for high resolution images to be captured, making this image sensor suitable for applications where detail is important.

Body Width: 29.21 inch

The compact body width of the sensor allows for easy integration into various devices or systems without taking up too much space.

Power Supplies (V): 3.3

The low power supply voltage of 3.3V helps in reducing overall power consumption of the device using this image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensors are known for their low power consumption, high image quality, and cost effectiveness, making this sensor a reliable choice for imaging applications.

Body Height: 3.05 mm

The low body height allows for a slim design of the device housing the image sensor, enabling compact and sleek product designs.

Package Shape or Style: SQUARE

The square package shape provides easy alignment during assembly and ensures uniformity in design, making it easier for manufacturers to integrate this sensor into their products.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85 °C allows for reliable operation even in challenging environmental conditions, enhancing the durability of the device.

Horizontal Pixel: 1024

The high horizontal pixel count of 1024 enables the sensor to capture detailed images with good resolution, making it suitable for applications that require high image clarity.

Output Range: 2.20-2.60V

The output range of 2.20-2.60V provides a stable and consistent digital voltage output, ensuring accuracy in image capture and processing.

Output Type: DIGITAL VOLTAGE

The digital voltage output type simplifies the interface with other digital systems and makes it easier to integrate this sensor into various digital devices.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature capability of -40 °C allows for reliable performance in cold environments, making this sensor suitable for a wide range of applications.

Maximum Operating Current: 41 mA

The low maximum operating current requirement of 41mA helps in reducing power consumption and heat generation, contributing to the overall efficiency of the device.

Housing: CERAMIC

The ceramic housing provides excellent thermal conductivity and durability, ensuring reliable performance even in harsh operating conditions.

Vertical Pixel: 1024

The high vertical pixel count of 1024 ensures that the sensor can capture detailed images with good resolution in both horizontal and vertical directions.

Body Length/Diameter: 29.21 mm

The compact body length/diameter of 29.21mm allows for easy integration of the sensor into various devices or systems, making it a versatile choice for different applications.

Termination Type: SOLDER

The solder termination type provides a secure and reliable connection, ensuring stable operation of the sensor in the device it is integrated into.

Array Type: FRAME

The frame array type allows for organized placement of pixels, ensuring uniform image capture and processing, making this sensor suitable for high-quality imaging applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the integration process and allows for easy assembly onto PCBs or other surfaces, making it convenient for manufacturers to use this sensor in their products.

Technical Specifications

Image Sensors NOIH2SM1000T-HHC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.21 inch

Body Height:

3.05 mm

Body Length/Diameter:

29.21 mm

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

41 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

18X18

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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