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NOIH2SM1000S-HHC

Onsemi

NOIH2SM1000S-HHC by Onsemi

NOIH2SM1000S-HHC by Onsemi is a CMOS image sensor with 18x18 um pixel size. Operating at temperatures from -40 to 85 °C, it has a digital voltage output range of 2.20-2.60V and requires a 3.3V power supply. Ideal for applications requiring a square package style, such as frame array imaging in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 4,793 parts In-Stock

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Digiode

USA . 2,083 parts In-Stock

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AZTECH Wire

Italy . 439 parts In-Stock

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TANS Electronics

Latvia . 7,811 parts In-Stock

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Kulean Microsystems

USA . 4,676 parts In-Stock

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SupplyDigital Components

Austria . 3,512 parts In-Stock

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Problanco Electronics

Mexico . 2,696 parts In-Stock

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UHIMA Technologies

Türkiye . 403 parts In-Stock

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Corphita

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Discover unparalleled quality and innovation with the NOIH2SM1000S-HHC image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in every product. Ideal for a wide range of applications, this image sensor offers exceptional value and benefits to customers seeking high-resolution imaging solutions. Whether you're capturing stunning visuals in security systems or enhancing medical imaging technologies, the NOIH2SM1000S-HHC delivers superior results that exceed expectations. Elevate your projects with this cutting-edge image sensor and experience the advantage of excellence in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 18X18

Small pixel size allows for higher resolution images to be captured, resulting in clear and detailed pictures.

Body Width: 29.21 inch

Slim body width makes it easy to integrate this image sensor into compact electronic devices.

Power Supplies (V): 3.3

Low power supply requirement of 3.3V makes the image sensor energy efficient and suitable for battery-operated applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high-quality image output with low power consumption, making it a preferred choice for digital cameras and smart devices.

Body Height: 3.05 mm

Low body height enables the image sensor to be used in slim devices without occupying much space.

Package Shape or Style: SQUARE

Square package shape offers a compact design that facilitates easy mounting and integration into electronic systems.

Maximum Operating Temperature: 85 °C

High maximum operating temperature range ensures the image sensor can withstand harsh environmental conditions and extended operating durations.

Horizontal Pixel: 1024

High horizontal pixel count allows for wide-angle image capturing and detailed image processing.

Output Range: 2.20-2.60V

Stable output voltage range ensures consistent and reliable digital image output for processing and analysis.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and transmission, making it compatible with modern digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature range ensures the image sensor functions effectively even in cold environments.

Maximum Operating Current: 41 mA

Low operating current consumption minimizes power usage and heat generation, enhancing the efficiency of the image sensor.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, ensuring reliable performance in demanding applications.

Vertical Pixel: 1024

High vertical pixel count allows for detailed image capture in both horizontal and vertical dimensions, enhancing overall image quality.

Body Length/Diameter: 29.21 mm

Compact body length enables easy integration and positioning of the image sensor within electronic devices.

Termination Type: SOLDER

Solder termination simplifies the installation process and ensures secure electrical connections for reliable operation.

Array Type: FRAME

Frame array type facilitates efficient image processing and manipulation, enabling advanced features such as image stitching and distortion correction.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation process and allows for easy integration into circuit boards and electronic assemblies.

Technical Specifications

Image Sensors NOIH2SM1000S-HHC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.21 inch

Body Height:

3.05 mm

Body Length/Diameter:

29.21 mm

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

41 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

18X18

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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