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NOIH2SM1000A-HWC

Onsemi

NOIH2SM1000A-HWC by Onsemi

NOIH2SM1000A-HWC by Onsemi is a CMOS image sensor with 1024x1024 pixels, 18x18 um pixel size, and digital voltage output. It operates b/w -40 to 85 °C, consuming 41mA max current. Housed in ceramic package, it's ideal for surface mount applications in various imaging systems.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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AZTECH Wire

Italy . 1,189 parts In-Stock

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Problanco Electronics

Mexico . 7,231 parts In-Stock

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TANS Electronics

Latvia . 6,978 parts In-Stock

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SupplyDigital Components

Austria . 5,201 parts In-Stock

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Kulean Microsystems

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Capture stunning images with the NOIH2SM1000A-HWC image sensor by Onsemi. As a leader in image sensor technology, Onsemi delivers top-quality products that are reliable and efficient. Ideal for a wide range of applications, this CMOS image sensor offers unparalleled performance and precision. With its high pixel resolution and advanced features, this sensor provides exceptional value and benefits to customers seeking superior image quality. Upgrade your imaging capabilities with the NOIH2SM1000A-HWC and experience the difference.

Feature Benefit Bullets

Pixel Size (um): 18X18

Larger pixel size allows more light to be captured, resulting in better image quality and performance in low light conditions.

Body Width: 29.21 inch

Compact size of the body makes it easier to integrate into different devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption, high speed operation, and good image quality, making them a popular choice for imaging applications.

Body Height: 3.05 mm

Low profile design allows for versatile mounting options and integration into slim devices.

Package Shape or Style: SQUARE

Square package shape provides efficient use of space and easy handling during installation.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in challenging environments.

Horizontal Pixel: 1024

High resolution horizontal pixel count enables detailed and sharp images.

Output Range: 2.20-2.60V

Stable output voltage range ensures consistent performance and compatibility with various systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies signal processing and integration with digital devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in extreme cold conditions without performance degradation.

Maximum Operating Current: 41 mA

Low operating current minimizes power consumption and extends battery life in portable devices.

Housing: CERAMIC

Ceramic housing provides durability, thermal stability, and protection against environmental factors.

Vertical Pixel: 1024

High resolution vertical pixel count ensures detailed and high-quality image capture.

Body Length/Diameter: 29.21 mm

Compact size and shape of the body enable easy integration and mounting in various applications.

Termination Type: SOLDER

Solder termination offers secure and reliable electrical connections for stable performance.

Array Type: FRAME

Frame array type allows for efficient image capture and processing, suitable for a wide range of applications.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies installation, saves space, and enables flexible mounting options.

Technical Specifications

Image Sensors NOIH2SM1000A-HWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.21 inch

Body Height:

3.05 mm

Body Length/Diameter:

29.21 mm

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

41 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

18X18

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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