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NOIH2SM1000A-HHC

Onsemi

NOIH2SM1000A-HHC by Onsemi

NOIH2SM1000A-HHC by Onsemi is a CMOS image sensor with 1024x1024 pixels, 18x18 um pixel size, and digital voltage output. It operates b/w -40 to 85 °C, drawing a max current of 41mA. Ideal for applications requiring high-resolution imaging in a compact square ceramic package.

Median Price

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Lifecycle Status

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Vyrian

USA . 7,203 parts In-Stock

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Digiode

USA . 1,358 parts In-Stock

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AZTECH Wire

Italy . 966 parts In-Stock

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Kulean Microsystems

USA . 6,173 parts In-Stock

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Corphita

USA . 1,732 parts In-Stock

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TANS Electronics

Latvia . 1,625 parts In-Stock

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Problanco Electronics

Mexico . 1,192 parts In-Stock

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Corohmni

South Africa . 222 parts In-Stock

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SupplyDigital Components

Austria . 136 parts In-Stock

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UHIMA Technologies

Türkiye . 33 parts In-Stock

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Overview

Upgrade your imaging experience with the NOIH2SM1000A-HHC by Onsemi. As a leader in image sensor technology, Onsemi delivers top-notch quality and reliability in every product. Designed for a wide range of applications, this image sensor provides crystal-clear, high-resolution images with a wide pixel size of 18x18 um. With a compact square package shape and easy surface mount installation, this sensor is perfect for any project. Trust Onsemi to bring value and innovation to your imaging solutions.

Feature Benefit Bullets

Pixel Size (um): 18X18

Smaller pixel size allows for high resolution images and better detail in the captured images.

Body Width: 29.21 inch

Compact and slim design makes for easy integration into various devices and projects.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers high quality image capture and low power consumption.

Body Height: 3.05 mm

Low profile design allows for placement in tight spaces while still capturing high quality images.

Package Shape or Style: SQUARE

Square shape facilitates easier mounting and integration into circuit boards or devices.

Maximum Operating Temperature: 85 °C

Operates efficiently even in high temperature environments, adding to its durability and reliability.

Horizontal Pixel: 1024

High horizontal pixel count ensures detailed and clear images with sharp resolution.

Output Range: 2.20-2.60V

Consistent output voltage range ensures reliable and accurate data transfer for further processing.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and transmission, enhancing overall efficiency.

Minimum Operating Temperature: -40 °C

Able to function in extremely cold temperatures, making it suitable for various environmental conditions.

Maximum Operating Current: 41 mA

Low power consumption ensures energy efficiency and prolonged battery life in devices.

Housing: CERAMIC

Ceramic housing provides durability and protection for the sensor, extending its lifespan.

Vertical Pixel: 1024

High vertical pixel count ensures comprehensive image coverage and detail in both horizontal and vertical dimensions.

Body Length/Diameter: 29.21 mm

Provides a well-balanced size for easy handling and integration into various devices and applications.

Termination Type: SOLDER

Solderable termination ensures secure and reliable connections for stable performance.

Array Type: FRAME

Frame array design offers better light capture and image quality compared to other array types.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies installation and integration, saving time and effort during production.

Technical Specifications

Image Sensors NOIH2SM1000A-HHC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

29.21 inch

Body Height:

3.05 mm

Body Length/Diameter:

29.21 mm

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Current:

41 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

18X18

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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