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NOIV1SE016KA-GTI

Onsemi

NOIV1SE016KA-GTI by Onsemi

NOIV1SE016KA-GTI by Onsemi is an Image Sensor with 4.5X4.5 um pixel size, 340 MHz master clock, and 80 fps frame rate. Ideal for applications requiring high-resolution imaging in a compact form factor, such as surveillance cameras or industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

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Vyrian

USA . 3,781 parts In-Stock

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Digiode

USA . 2,189 parts In-Stock

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USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 4,593 parts In-Stock

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SupplyDigital Components

Austria . 4,347 parts In-Stock

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Kulean Microsystems

USA . 4,183 parts In-Stock

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Corphita

USA . 482 parts In-Stock

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Corohmni

South Africa . 348 parts In-Stock

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Problanco Electronics

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UHIMA Technologies

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Overview

Unlock a world of crystal-clear images and seamless performance with the NOIV1SE016KA-GTI by Onsemi. As a leader in image sensor technology, Onsemi delivers unparalleled quality and reliability, making this product ideal for a wide range of applications. Whether you're capturing stunning visuals in photography, monitoring security footage, or enhancing medical imaging systems, this innovative image sensor offers exceptional value and benefits. Experience the advantages of cutting-edge technology with the NOIV1SE016KA-GTI and elevate your projects to new heights.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Smaller pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 2 V

Allows for efficient power usage and compatibility with various systems.

Master Clock: 340 MHz

High master clock speed enables fast data processing and image capture.

Body Width: 36.1 inch

Compact body width makes it easy to integrate into different applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide high image quality and low noise levels.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy mounting and integration.

Minimum Supply Voltage: 1.6 V

Low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures reliability in different environments.

Horizontal Pixel: 4096

High horizontal pixel count results in sharp and detailed images.

Output Type: CURRENT OUTPUT

Current output type provides accurate and reliable data transmission.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Maximum Operating Current: 915 mA

High maximum operating current ensures stable performance under load.

Housing: CERAMIC

Ceramic housing offers durability and protection for the image sensor.

Dynamic Range: 56 dB

Wide dynamic range allows for capturing both bright and dark areas in a scene.

Vertical Pixel: 4096

High vertical pixel count helps in capturing detailed images with depth.

Body Length/Diameter: 43.1 mm

Compact body length makes it suitable for small form factor applications.

Spectral Response (nm): 400-1000

Wide spectral response range enables capturing images across different light wavelengths.

Termination Type: SOLDER

Solder termination type ensures secure connections for reliable operation.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface allows for easy communication with external devices.

Frame Rate: 80 fps

High frame rate enables capturing fast-moving objects with clarity.

Array Type: FRAME

Frame array type provides uniform image capture across the sensor.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount feature facilitates secure and stable installation.

Technical Specifications

Image Sensors NOIV1SE016KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

56 dB

Frame Rate:

80 fps

Horizontal Pixel:

4096

Housing:

CERAMIC

Master Clock:

340 MHz

Mounting Feature:

Maximum Operating Current:

915 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

4096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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