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KAI-16070-QXA-JD-B1

Onsemi

KAI-16070-QXA-JD-B1 by Onsemi

Onsemi's KAI-16070-QXA-JD-B1 image sensor features 7.4X7.4 um pixel size, 40 MHz master clock, and 70.5 dB dynamic range. Ideal for applications requiring high-resolution imaging with a max supply voltage of 15.5 V and operating temperature range from -50 to 70 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,950 parts In-Stock

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Digiode

USA . 2,314 parts In-Stock

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AZTECH Wire

Italy . 877 parts In-Stock

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$10.510

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SupplyDigital Components

Austria . 3,870 parts In-Stock

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Kulean Microsystems

USA . 3,104 parts In-Stock

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Problanco Electronics

Mexico . 2,057 parts In-Stock

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Corphita

USA . 1,898 parts In-Stock

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TANS Electronics

Latvia . 451 parts In-Stock

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Corohmni

South Africa . 420 parts In-Stock

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UHIMA Technologies

Türkiye . 50 parts In-Stock

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Overview

Discover the power of high-quality imaging with the KAI-16070-QXA-JD-B1 by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-of-the-line products that guarantee superior performance and reliability. Ideal for a wide range of applications, this image sensor boasts exceptional pixel size and dynamic range, ensuring crystal-clear images every time. Say goodbye to blurry visuals and hello to precision with the KAI-16070-QXA-JD-B1. Elevate your imaging experience today!

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and signal strength.

Master Clock: 40 MHz

Higher master clock speed enables faster processing of image data.

Body Width: 45.34 inch

Compact size makes it easy to integrate into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality images with low noise levels.

Body Height: 3.61 mm

Low profile design for slim devices and easy installation.

Package Shape or Style: RECTANGULAR

Rectangular shape provides versatile mounting options.

Minimum Supply Voltage: 14.5 V

Wide voltage range allows for flexibility in power supply options.

Maximum Operating Temperature: 70 °C

High operating temperature range for use in various environments.

Horizontal Pixel: 4864

High horizontal pixel count for high-resolution images.

Minimum Operating Temperature: -50 °C

Wide operating temperature range for use in extreme conditions.

Dynamic Range: 70.5 dB

High dynamic range for capturing details in both bright and dark areas.

Vertical Pixel: 3232

High vertical pixel count for detailed imaging and accurate reproduction.

Body Length/Diameter: 47.24 mm

Compact design for space-constrained applications.

Optical Format (inch): 1.37

Suitable optical format for capturing images with the desired field of view.

Termination Type: SOLDER

Secure solder termination for reliable connections.

Frame Rate: 8 fps

Decent frame rate for capturing moving objects without blurring.

Array Type: INTERLINE

Interline array type for efficient light capture and reduced blooming effects.

Mounting Feature: THROUGH HOLE MOUNT

Easy and secure mounting option for stable installation.

Technical Specifications

Image Sensors KAI-16070-QXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS OPTICAL FORMAT 1.37 INCH, IT HAS EXTENDED LINEAR DYNAMIC RANGE 82.5 DB

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

70.5 dB

Frame Rate:

8 fps

Horizontal Pixel:

4864

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.37

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3232

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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