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AS0140AT

Onsemi

AS0140AT by Onsemi

AS0140AT by Onsemi is an image sensor with 3x3 um pixel size, 1.7-1.98V supply voltage range, and 27 MHz master clock. Ideal for applications requiring a 1280x800 linear array sensor with a digital voltage output interface, such as surveillance cameras and industrial imaging systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Digiode

USA . 2,364 parts In-Stock

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Vyrian

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Native Components

USA . 853 parts In-Stock

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SupplyDigital Components

Austria . 8,202 parts In-Stock

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Problanco Electronics

Mexico . 5,387 parts In-Stock

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TANS Electronics

Latvia . 4,872 parts In-Stock

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Kulean Microsystems

USA . 3,831 parts In-Stock

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Northwest PG Solutions

USA . 2,048 parts In-Stock

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Corphita

USA . 1,222 parts In-Stock

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Corohmni

South Africa . 459 parts In-Stock

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UHIMA Technologies

Türkiye . 142 parts In-Stock

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Overview

Elevate your imaging experience with the AS0140AT from Onsemi. As a leading manufacturer in the industry of image sensors, Onsemi guarantees top-notch quality and cutting-edge technology. Ideal for a wide range of applications, this image sensor offers unparalleled clarity and precision. With its compact design and advanced features, the AS0140AT provides exceptional value and performance, making it the perfect choice for customers who demand nothing but the best. Upgrade your imaging capabilities today with the AS0140AT by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 3X3

Smaller pixel size allows for higher resolution images to be captured, making this product ideal for applications requiring detailed image capture.

Maximum Supply Voltage: 1.98 V

The higher maximum supply voltage allows for better performance and stability of the image sensor, ensuring reliable operation in varied conditions.

Master Clock: 27 MHz

The high frequency master clock of 27 MHz ensures fast and efficient data processing, enabling real-time image capture and processing.

Body Width: 8.5 inch

The compact body width of 8.5 inch makes this image sensor easy to integrate into various devices or systems without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers low power consumption and high sensitivity, making this image sensor energy-efficient and capable of capturing clear images in low light conditions.

Body Height: 1.57 mm

The slim body height of 1.57 mm allows for the image sensor to be used in slim devices or applications where space is limited.

Package Shape or Style: SQUARE

The square package shape offers easy mounting and alignment during integration, making it efficient for manufacturers to incorporate this image sensor into their products.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage ensures energy efficiency and extends battery life for devices incorporating this image sensor.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature of 105 °C allows for reliable operation in extreme conditions, increasing the versatility of this image sensor.

Horizontal Pixel: 1280

The high horizontal pixel count of 1280 enables detailed and high-resolution image capture, suitable for applications requiring precise image quality.

Output Range: 0.56-2.24V

The wide output range provides flexibility in signal processing and compatibility with various systems, ensuring seamless integration and data transmission.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and interpretation, making it easier for end-users to utilize the captured image data for their applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures reliable performance even in harsh environments, making this image sensor suitable for outdoor or industrial applications.

Vertical Pixel: 800

The vertical pixel count of 800 provides a balanced resolution for various applications, offering a good compromise between image detail and processing speed.

Body Length/Diameter: 8.5 mm

The compact body length/diameter of 8.5 mm allows for easy installation and integration of the image sensor in small devices or systems.

Optical Format (inch): 1/4

The optical format of 1/4 inch offers a good balance between image quality and sensor size, making this image sensor versatile for a wide range of applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, preventing signal interference or loss during operation and maintenance.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies communication and data transfer with other devices or systems, facilitating seamless integration and control of the image sensor.

Frame Rate: 60 fps

The high frame rate of 60 frames per second enables smooth and real-time image capture, essential for applications requiring precise motion detection or high-speed imaging.

Array Type: LINEAR

The linear array design offers precise and organized image capture, suitable for applications where pixel alignment and accuracy are crucial for image quality.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation process and ensures secure attachment of the image sensor to circuit boards or devices, reducing assembly time and costs.

Technical Specifications

Image Sensors AS0140AT attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

8.5 inch

Body Height:

1.57 mm

Body Length/Diameter:

8.5 mm

Frame Rate:

60 fps

Horizontal Pixel:

1280

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.98 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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