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AS0140AT2C00XUSM0-DPBR

Onsemi

AS0140AT2C00XUSM0-DPBR by Onsemi

AS0140AT2C00XUSM0-DPBR by Onsemi is a 1/4 inch CMOS image sensor with 1280x800 resolution, 27 MHz master clock, and 60 fps frame rate. Ideal for digital cameras, surveillance systems, and automotive applications due to its compact size and high-quality imaging capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,885 parts In-Stock

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Digiode

USA . 914 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 328 parts In-Stock

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$8.100

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Native Components

USA . 406 parts In-Stock

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$66.569

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$63.906

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Northwest PG Solutions

USA . 649 parts In-Stock

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$73.226

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SupplyDigital Components

Austria . 5,805 parts In-Stock

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Problanco Electronics

Mexico . 5,724 parts In-Stock

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Kulean Microsystems

USA . 3,112 parts In-Stock

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Corphita

USA . 1,618 parts In-Stock

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UHIMA Technologies

Türkiye . 882 parts In-Stock

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TANS Electronics

Latvia . 875 parts In-Stock

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Corohmni

South Africa . 167 parts In-Stock

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Overview

Capture crisp and vibrant images with the AS0140AT2C00XUSM0-DPBR image sensor by Onsemi. Renowned for their high-quality products, Onsemi delivers exceptional performance and reliability in every sensor they produce. Ideal for a wide range of applications, this image sensor provides clear and detailed images, making it perfect for security systems, medical imaging, and automotive cameras. Experience the value and benefits of superior image quality and precision with the AS0140AT2C00XUSM0-DPBR by Onsemi.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for capturing detailed images with high resolution.

Maximum Supply Voltage: 1.98 V

Allows for efficient power consumption and operation within safe voltage limits.

Master Clock: 27 MHz

High clock frequency enables fast processing and data transfer.

Body Width: 8.5 inch

Compact size makes it suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides high-quality image sensing capabilities.

Body Height: 1.57 mm

Low profile design for space-constrained applications.

Package Shape or Style: SQUARE

Square shape for easy mounting and alignment in devices.

Minimum Supply Voltage: 1.7 V

Can operate at low voltages for energy-efficient performance.

Maximum Operating Temperature: 105 °C

Wide operating temperature range for versatile usage in different environments.

Horizontal Pixel: 1280

High pixel count for sharp and clear horizontal image resolution.

Output Range: 0.56-2.24V

Wide output range for capturing both bright and dark image details.

Output Type: DIGITAL VOLTAGE

Digital output for easy processing and communication with other devices.

Minimum Operating Temperature: -40 °C

Capable of operating in low-temperature environments without issues.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish for long-lasting performance and reliable connections.

Vertical Pixel: 800

Vertical pixel count for detailed and high-quality image capture.

Body Length/Diameter: 8.5 mm

Compact and uniform body dimensions for easy integration and mounting.

Optical Format (inch): 1/4

Standard optical format for compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination for secure and reliable connections during operation.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for easy connectivity and communication with external devices.

Frame Rate: 60 fps

High frame rate for smooth and real-time image capture and video recording.

Array Type: FRAME

Frame array design for organized and efficient image sensing capabilities.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation in devices or systems.

Technical Specifications

Image Sensors AS0140AT2C00XUSM0-DPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO HAS ANALOG SUPPLY VOLTAGE 2.50-3.10 V

Array Type:

FRAME

Body Width:

8.5 inch

Body Height:

1.57 mm

Body Length/Diameter:

8.5 mm

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.98 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

800

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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