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TC217-30

Texas Instruments

TC217-30 by Texas Instruments

TC217-30 by Texas Instruments is an image sensor with 11.7X9 um pixel size, 1134 horizontal pixels, and 486 vertical pixels. It operates b/w -30 to 85 °C with a dynamic range of 73 dB. Ideal for applications requiring high sensitivity and precise imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,953 parts In-Stock

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6,953

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Digiode

USA . 3,350 parts In-Stock

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3,350

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Distributors (Availability)

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Parana Technologies

USA . 694 parts In-Stock

1+ parts

$2.601

100+ parts

$241.586

1k+ parts

$2.341

10k+ parts

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694

$2.601

$241.586

$2.341

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DigiPath Technology Company

USA . 55 parts In-Stock

1+ parts

$2.865

100+ parts

$2.635

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55

$2.865

$2.635

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ChromeModa Solutions

Germany . 4,656 parts In-Stock

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$2.923

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$2.397

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4,656

$2.923

$2.397

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IDEA Electronic Components Group

UK . 1,549 parts In-Stock

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$2.923

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$2.631

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1,549

$2.923

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$2.631

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Semicontronic

India . 1,119 parts In-Stock

1+ parts

$16.750

100+ parts

$16.331

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$16.248

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1,119

$16.750

$16.331

$16.248

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AZTECH Wire

Italy . 224 parts In-Stock

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$17.233

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$17.233

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Ampacity Inc.

Singapore . 981 parts In-Stock

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$32.750

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981

$32.750

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One Stop Electronics

USA . 255 parts In-Stock

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$38.750

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$38.750

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Corphita

USA . 3,151 parts In-Stock

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Corohmni

South Africa . 120 parts In-Stock

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Overview

Capture every detail with the TC217-30 by Texas Instruments. This high-quality image sensor offers unparalleled precision and reliability, making it the perfect choice for a wide range of applications. From industrial automation to security systems, this CCD sensor delivers exceptional performance in any setting. With Texas Instruments' reputation for excellence in manufacturing, you can trust that the TC217-30 will exceed your expectations. Upgrade your imaging capabilities today and experience the value and benefits this cutting-edge technology has to offer.

Feature Benefit Bullets

Pixel Size (um): 11.7X9

Smaller pixel size provides higher resolution and better image quality.

Maximum Supply Voltage: 13 V

Higher supply voltage allows for greater flexibility in power management and performance.

Body Width: 18.54 inch

Compact body width makes it suitable for integration into various devices.

Power Supplies (V): 12

Standard power supply voltage ensures compatibility with most systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for high-quality image capture and low noise performance.

Body Height: 3.86 mm

Low profile design for space-constrained applications.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy integration into electronic systems.

Minimum Supply Voltage: 11 V

Low minimum supply voltage helps in energy efficiency.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures reliability in various environments.

Horizontal Pixel: 1134

High number of horizontal pixels captures detailed images.

Output Range: 0.32-0.41V

Wide output range provides flexibility in signal processing.

Output Type: ANALOG VOLTAGE

Analog voltage output is suitable for direct interfacing with analog circuits.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows for use in cold environments.

Maximum Operating Current: 9 mA

Low operating current for energy efficiency.

Housing: CERAMIC, METAL-SEALED COFIRED

Durable housing materials ensure longevity and reliability.

Dynamic Range: 73 dB

High dynamic range captures a wide range of brightness levels in the image.

Vertical Pixel: 486

Sufficient vertical pixels for capturing detailed images.

Body Length/Diameter: 27.81 mm

Compact body length for easy integration into devices.

Optical Format (inch): 2/3

Standard optical format for compatibility with various lenses and systems.

Termination Type: SOLDER

Solder termination for easy mounting and connection.

Array Type: FRAME TRANSFER

Frame transfer array type for high-speed image capture.

Sensitivity (V/lx.s): 50 V/lx.s

High sensitivity for capturing clear images in low light conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for secure and stable installation.

Technical Specifications

Image Sensors TC217-30 attributes and parameters. Explore more Image Sensors devices from Texas Instruments

Specs

Array Type:

FRAME TRANSFER

Body Width:

18.54 inch

Body Height:

3.86 mm

Body Length/Diameter:

27.81 mm

Dynamic Range:

73 dB

Horizontal Pixel:

1134

Housing:

CERAMIC, METAL-SEALED COFIRED

Mounting Feature:

Maximum Operating Current:

9 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

2/3

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

11.7X9

Power Supplies (V):

12

Sensitivity (V/lx.s):

50 V/lx.s

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

13 V

Minimum Supply Voltage:

11 V

Termination Type:

SOLDER

Vertical Pixel:

486

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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