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KAI-01050-ABA-FD-AE

Onsemi

KAI-01050-ABA-FD-AE by Onsemi

Onsemi's KAI-01050-ABA-FD-AE image sensor features 5.5x5.5 um pixel size, 1024x1024 resolution, and 64 dB dynamic range. Ideal for digital imaging applications, this CCD sensor operates b/w -50 to 70 °C with a supply voltage range of 14.5V to 15.5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Digiode

USA . 1,767 parts In-Stock

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Vyrian

USA . 790 parts In-Stock

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TANS Electronics

Latvia . 7,866 parts In-Stock

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Problanco Electronics

Mexico . 4,674 parts In-Stock

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SupplyDigital Components

Austria . 3,415 parts In-Stock

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Kulean Microsystems

USA . 2,452 parts In-Stock

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Corphita

USA . 1,633 parts In-Stock

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UHIMA Technologies

Türkiye . 347 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Discover the power of cutting-edge technology with the KAI-01050-ABA-FD-AE image sensor by Onsemi. Crafted with precision and expertise, this sensor opens up a world of possibilities in imaging applications. From capturing stunning visuals to enhancing security systems, this sensor delivers unparalleled performance and reliability. Experience the quality and innovation that Onsemi is known for, and unlock the true potential of your projects with the KAI-01050-ABA-FD-AE.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution images to be captured, providing sharp and detailed pictures.

Maximum Supply Voltage: 15.5 V

The higher supply voltage allows for better performance and efficiency of the image sensor.

Body Width: 18.29 inch

The compact body width makes it easy to integrate this image sensor into different devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor ensures high-quality images with accurate colors and low noise levels.

Package Shape or Style: SQUARE

The square shape of the package provides easy integration and compatibility with other components.

Minimum Supply Voltage: 14.5 V

The lower minimum supply voltage ensures that the image sensor can operate efficiently even in low power situations.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range makes this image sensor suitable for use in a variety of environments and conditions.

Horizontal Pixel: 1024

Having a high horizontal pixel count allows for wide and detailed images to be captured, perfect for applications requiring high-resolution photos.

Output Type: DIGITAL VOLTAGE

The digital voltage output provides a reliable and easy-to-use signal for processing the image data captured by the sensor.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature range allows the image sensor to function even in extremely cold conditions without any issues.

Housing: CERAMIC

The ceramic housing provides durability and protection to the sensitive components inside, ensuring a longer lifespan for the image sensor.

Dynamic Range: 64 dB

The high dynamic range allows the image sensor to capture both bright and dark areas in a scene with good detail and minimal noise.

Vertical Pixel: 1024

Having a high vertical pixel count ensures that the image sensor can capture detailed images in both horizontal and vertical directions.

Body Length/Diameter: 18.29 mm

The compact body length/diameter makes it easy to mount and install this image sensor in various devices and applications.

Optical Format (inch): 1/2

The optical format of 1/2 inch provides a good balance between size and performance, making it a versatile choice for different imaging tasks.

Termination Type: SOLDER

The solder termination type ensures a secure and stable connection for the image sensor, reducing the risk of signal loss or interference.

Array Type: INTERLINE

The interline array type offers faster readout speeds and better noise reduction, resulting in higher quality images with minimal distortion.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the image sensor on PCBs or other surfaces, simplifying the manufacturing process.

Technical Specifications

Image Sensors KAI-01050-ABA-FD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

18.29 inch

Body Height:

2.94 mm

Body Length/Diameter:

18.29 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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