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NOIV2SN2000A-QDC

Onsemi

NOIV2SN2000A-QDC by Onsemi

NOIV2SN2000A-QDC by Onsemi is a 1920x1200 CMOS image sensor with 4.80x4.80 um pixel size, operating at 62 MHz clock speed. It has a wide temperature range of 0-70 °C and low power consumption of 10 mA, suitable for high-resolution imaging applications in industrial and automotive sectors.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Vyrian

USA . 6,641 parts In-Stock

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Digiode

USA . 2,486 parts In-Stock

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AZTECH Wire

Italy . 1,191 parts In-Stock

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Problanco Electronics

Mexico . 7,951 parts In-Stock

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Kulean Microsystems

USA . 6,709 parts In-Stock

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TANS Electronics

Latvia . 5,012 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 1,726 parts In-Stock

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SupplyDigital Components

Austria . 1,675 parts In-Stock

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UHIMA Technologies

Türkiye . 298 parts In-Stock

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Corohmni

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Overview

Capture stunning images with the NOIV2SN2000A-QDC image sensor by Onsemi. As a leader in the industry, Onsemi ensures top-notch quality and reliability in all their products. Ideal for a wide range of applications, this image sensor offers unmatched precision and clarity, providing value and benefits to customers looking for exceptional performance. Elevate your projects with the NOIV2SN2000A-QDC and experience the superior advantages it brings to the table.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Higher pixel size results in better image quality and sensitivity, making this image sensor a good choice for capturing detailed images.

Maximum Supply Voltage: 2 V

Operates at a low maximum supply voltage, helping to consume less power and extend the battery life of devices.

Master Clock: 62 MHz

High master clock frequency allows for fast data processing and efficient operation of the image sensor.

Body Width: 19.05 inch

Compact body width enables easy integration into various devices and systems.

Power Supplies (V): 3.3

Stable power supply voltage ensures reliable performance of the image sensor in different operating conditions.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers high image quality, low power consumption, and fast readout speeds, making it a popular choice in modern devices.

Body Height: 2.2 mm

Low body height allows for compact device designs and easy integration into slim devices.

Package Shape or Style: SQUARE

Square package shape provides good alignment and positioning during assembly, ensuring proper functioning of the image sensor.

Minimum Supply Voltage: 1.6 V

Even lower minimum supply voltage helps in reducing power consumption and improving overall energy efficiency of the image sensor.

Maximum Operating Temperature: 70 °C

Withstands high operating temperatures, making it suitable for use in various environments and applications.

Horizontal Pixel: 1920

High horizontal pixel count results in detailed and high-resolution images, making this image sensor ideal for applications requiring fine image quality.

Minimum Operating Temperature: 0 °C

Capable of operating at low temperatures, allowing for use in cold climates or refrigerated environments.

Maximum Operating Current: 10 mA

Low operating current consumption helps in conserving power and extending the operational life of the image sensor.

Housing: CERAMIC

Ceramic housing offers durability, thermal stability, and protection to the sensitive components of the image sensor, ensuring long-term reliability.

Dynamic Range: 53 dB

Good dynamic range allows the image sensor to capture both bright and dark areas accurately, resulting in well-exposed images with details in highlights and shadows.

Vertical Pixel: 1200

Adequate vertical pixel count provides balanced image resolution, contributing to overall image clarity and detail.

Body Length/Diameter: 19.05 mm

Compact body length/diameter facilitates easy installation and integration into devices, particularly those with space constraints.

Optical Format (inch): 2/3

Fits standard 2/3-inch optical formats and compatible with a wide range of lenses, allowing for versatility in capturing different types of images.

Data Rate: 62 Mbps

High data rate facilitates fast transmission of image data, enabling quick processing and efficient transfer of images to other devices or systems.

Termination Type: SOLDER

Solder termination provides reliable electrical connections and secure attachment of the image sensor to circuit boards, ensuring stable performance.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface offers a simple and efficient connection method, making it easy to integrate the image sensor into different systems and devices.

Frame Rate: 23 fps

Decent frame rate allows for smooth and fluid video recording or image capture, suitable for applications requiring real-time imaging.

Array Type: FRAME

Frame array type offers organized and structured pixel arrangement, contributing to improved image quality and clarity.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation process and ensures secure attachment to circuit boards, enhancing the overall reliability of the image sensor.

Technical Specifications

Image Sensors NOIV2SN2000A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE SUPPLY VOLTAGE 3.0 TO 3.6 V, ALSO CURRENT CONSUMPTION 110 MA, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

19.05 inch

Body Height:

2.2 mm

Body Length/Diameter:

19.05 mm

Data Rate:

62 Mbps

Dynamic Range:

53 dB

Frame Rate:

23 fps

Horizontal Pixel:

1920

Housing:

CERAMIC

Master Clock:

62 MHz

Mounting Feature:

Maximum Operating Current:

10 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

2/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

Other Sensors/Transducers

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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