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NOIV1SE2000A-QDC

Onsemi

NOIV1SE2000A-QDC by Onsemi

NOIV1SE2000A-QDC by Onsemi features 4.80x4.80 um pixel size, 62 MHz master clock, and 1920 horizontal pixels. Ideal for image sensing applications with a dynamic range of 53 dB and frame rate of 92 fps in a compact SQUARE package shape suitable for SURFACE mounting.

Median Price

$262.726

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7 parts In-Stock

1+ parts

$241.590

100+ parts

$227.090

1k+ parts

$212.600

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7

$241.590

$227.090

$212.600

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Verical

USA . 7 parts In-Stock

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-

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$283.863

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$265.750

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7

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$283.863

$265.750

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Distributors (In-Stock)

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Digiode

USA . 2,082 parts In-Stock

1+ parts

$267.159

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2,082

$267.159

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Vyrian

USA . 4,984 parts In-Stock

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Kiltronic GmbH

Germany . 2 parts In-Stock

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AZTECH Wire

Italy . 1,028 parts In-Stock

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$21.440

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$21.440

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Corphita

USA . 1,395 parts In-Stock

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$253.098

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$253.098

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Corohmni

South Africa . 58 parts In-Stock

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$281.220

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SupplyDigital Components

Austria . 4,739 parts In-Stock

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Problanco Electronics

Mexico . 4,115 parts In-Stock

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Kulean Microsystems

USA . 2,085 parts In-Stock

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TANS Electronics

Latvia . 670 parts In-Stock

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UHIMA Technologies

Türkiye . 658 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

USA . 33 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 3 parts In-Stock

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Overview

Capture every moment in stunning clarity with the NOIV1SE2000A-QDC image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in every product they create. Perfect for applications such as surveillance cameras, industrial imaging, and robotics, this image sensor offers unparalleled value with its high performance and advanced features. Experience the benefits of crystal-clear images, low power consumption, and a wide operating temperature range. Trust Onsemi to provide you with the best in imaging technology.

Feature Benefit Bullets

Pixel Size (um)

Larger pixel size (4.80X4.80 um) allows for more light to be captured, resulting in better image quality and low-light performance.

Maximum Supply Voltage

Operating at a maximum supply voltage of 2V ensures efficient power usage and helps in preventing damage due to overvoltage.

Master Clock

High master clock frequency (62 MHz) allows for fast data readout and high-speed imaging capabilities.

Power Supplies (V)

Stable power supply at 3.3V ensures consistent performance and reliable operation of the image sensor.

Sensors or Transducers Type

CMOS image sensor technology offers low power consumption, high sensitivity, and excellent image quality, making it a preferred choice in modern imaging applications.

Minimum Operating Temperature

With a minimum operating temperature of 0 °C, this image sensor can be used in a wide range of environments without compromising performance.

Frame Rate

High frame rate of 92 fps allows for capturing fast-moving objects with clarity and reduces motion blur in images or videos.

Mounting Feature

Surface mount compatibility makes it easier to integrate the image sensor into various devices and systems, saving time and effort during assembly.

Technical Specifications

Image Sensors NOIV1SE2000A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE SUPPLY VOLTAGE 3.0 TO 3.6 V, ALSO CURRENT CONSUMPTION 125 MA, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

19.05 inch

Body Height:

2.2 mm

Body Length/Diameter:

19.05 mm

Dynamic Range:

53 dB

Frame Rate:

92 fps

Horizontal Pixel:

1920

Housing:

CERAMIC

Master Clock:

62 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

2/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

Other Sensors/Transducers

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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