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NOIV2SN1300A-QDC

Onsemi

NOIV2SN1300A-QDC by Onsemi

NOIV2SN1300A-QDC by Onsemi features 4.80X4.80 um pixel size, 62 MHz master clock, and 1280x1024 resolution. Ideal for image sensing applications due to its CMOS sensor type and 1/2 inch optical format, with a frame rate of 37 fps.

Median Price

$118.750

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 144 parts In-Stock

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$163.270

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$139.063

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Verical

USA . 192 parts In-Stock

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$113.950

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Mouser Electronics

USA . 64 parts In-Stock

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$118.750

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Digiode

USA . 2,311 parts In-Stock

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$186.076

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Vyrian

USA . 6,460 parts In-Stock

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Chip Stock

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Flip Electronics

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Nova Conductors

Japan . 79 parts In-Stock

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Ampacity Inc.

Singapore . 108 parts In-Stock

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$106.890

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108

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Corohmni

South Africa . 316 parts In-Stock

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$129.770

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Corphita

USA . 954 parts In-Stock

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$176.283

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TANS Electronics

Latvia . 8,397 parts In-Stock

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SupplyDigital Components

Austria . 5,938 parts In-Stock

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Kulean Microsystems

USA . 3,640 parts In-Stock

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Problanco Electronics

Mexico . 3,052 parts In-Stock

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Argo Parts USA

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Netroflash

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 915 parts In-Stock

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UHIMA Technologies

Türkiye . 392 parts In-Stock

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Authorized Procurement Solutions

USA . 22 parts In-Stock

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Overview

Capture stunning images with the NOIV2SN1300A-QDC by Onsemi, a top-of-the-line image sensor designed for quality and reliability. Onsemi, a trusted manufacturer, brings you this cutting-edge product that is perfect for a wide range of applications. Experience the exceptional value and benefits that this image sensor offers, from its high performance capabilities to its versatility in various settings. Trust Onsemi to deliver excellence in every pixel, revolutionizing your imaging experience like never before.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Higher pixel size allows for better light sensitivity and image quality.

Maximum Supply Voltage: 2 V

Efficient power consumption with a moderate supply voltage.

Master Clock: 62 MHz

High clock frequency enables fast image capturing and processing.

Body Width: 14.22 inch

Compact size for easy integration into different devices.

Power Supplies (V): 3.3

Stable power supply for consistent performance.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Uses CMOS technology for efficient and high-quality image sensing.

Body Height: 2.2 mm

Slim profile for versatile mounting options.

Package Shape or Style: SQUARE

Square shape for easy alignment and integration in designs.

Minimum Supply Voltage: 1.6 V

Low minimum supply voltage for energy efficiency.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 1280

High resolution for detailed image capture.

Minimum Operating Temperature: -40 °C

Operates in low temperatures for various applications.

Maximum Operating Current: 10 mA

Low operating current for power efficiency.

Dynamic Range: 53 dB

High dynamic range for capturing both bright and dark areas in images.

Vertical Pixel: 1024

Vertical resolution for clear and sharp images.

Body Length/Diameter: 14.22 mm

Compact size for easy integration into designs.

Optical Format (inch): 1/2

Standard optical format for compatibility with various lenses.

Data Rate: 62 Mbps

High data rate for fast transfer of image data.

Termination Type: SOLDER

Solder termination for secure and reliable connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for easy communication with other devices.

Frame Rate: 37 fps

Decent frame rate for capturing moving objects with clarity.

Array Type: FRAME

Frame array for efficient image processing and capturing.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation.

Technical Specifications

Image Sensors NOIV2SN1300A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE SUPPLY VOLTAGE 3.0 TO 3.6 V, ALSO CURRENT CONSUMPTION 110 MA, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.2 mm

Body Length/Diameter:

14.22 mm

Data Rate:

62 Mbps

Dynamic Range:

53 dB

Frame Rate:

37 fps

Horizontal Pixel:

1280

Master Clock:

62 MHz

Mounting Feature:

Maximum Operating Current:

10 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

Other Sensors/Transducers

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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