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KAI-04070-ABA-JD-BA

Onsemi

KAI-04070-ABA-JD-BA by Onsemi

Onsemi's KAI-04070-ABA-JD-BA image sensor features 7.4x7.4 um pixel size, 2048x2048 resolution, and 82 dB dynamic range. Ideal for applications requiring high-quality imaging in industrial cameras, surveillance systems, and scientific instruments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,101 parts In-Stock

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Digiode

USA . 1,302 parts In-Stock

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Problanco Electronics

Mexico . 7,079 parts In-Stock

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SupplyDigital Components

Austria . 4,379 parts In-Stock

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Kulean Microsystems

USA . 1,890 parts In-Stock

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Corohmni

South Africa . 295 parts In-Stock

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UHIMA Technologies

Türkiye . 264 parts In-Stock

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TANS Electronics

Latvia . 208 parts In-Stock

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Corphita

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Overview

Looking for top-notch image sensors to take your projects to the next level? Look no further than the KAI-04070-ABA-JD-BA by Onsemi. With a reputation for excellence and innovation, Onsemi delivers high-quality products that exceed industry standards. Whether you're in the field of surveillance, automotive, or medical imaging, this image sensor provides unparalleled performance, reliability, and versatility. Trust Onsemi to provide cutting-edge technology that brings value and benefits to your applications. Elevate your projects with the KAI-04070-ABA-JD-BA and experience the advantages of working with a trusted manufacturer like Onsemi.

Feature Benefit Bullets

Pixel Size (um) 7.4X7.4

The small pixel size allows for high resolution and detailed images to be captured.

Maximum Supply Voltage 15.5 V

Allows for flexibility in power supply options and can handle higher voltage inputs.

Body Width 29 inch

Compact size makes it suitable for various applications where space is limited.

Power Supplies (V) 15

Optimal power supply voltage for efficient performance.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD technology ensures high image quality and sensitivity.

Body Height 3 mm

Low profile design for easy integration into different devices.

Package Shape or Style RECTANGULAR

Sleek and versatile packaging for easy installation and compatibility with various systems.

Minimum Supply Voltage 14.5 V

Can operate efficiently even at lower voltage inputs.

Maximum Operating Temperature 70 °C

High operating temperature range allows for use in different environments.

Horizontal Pixel 2048

High horizontal pixel count for detailed and sharp images.

Minimum Operating Temperature -50 °C

Wide operating temperature range ensures performance in extreme cold conditions.

Maximum Operating Current 11 mA

Low operating current for energy efficiency.

Dynamic Range 82 dB

Wide dynamic range for capturing both dark and bright areas in a scene.

Vertical Pixel 2048

High vertical pixel count for high-quality image capture.

Body Length/Diameter 40 mm

Compact and ergonomic design for easy handling and installation.

Optical Format (inch) 4/3

Standard optical format for compatibility with various lenses and optical systems.

Termination Type SOLDER

Secure soldered termination for reliable connections.

Frame Rate 28 fps

High frame rate for capturing fast-moving objects or dynamic scenes.

Array Type INTERLINE

Interline array for efficient and high-speed image capture.

Mounting Feature THROUGH HOLE MOUNT

Easy and secure mounting option for stable installation in devices.

Technical Specifications

Image Sensors KAI-04070-ABA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW, 33 MICRO VOLT PER ELECTRON HIGH

Array Type:

INTERLINE

Body Width:

29 inch

Body Height:

3 mm

Body Length/Diameter:

40 mm

Dynamic Range:

82 dB

Frame Rate:

28 fps

Horizontal Pixel:

2048

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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