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AR0140AT2C00XUEA0-TPBR

Onsemi

AR0140AT2C00XUEA0-TPBR by Onsemi

Onsemi's AR0140AT2C00XUEA0-TPBR is a 1/4 inch CMOS image sensor with 1280x800 resolution, 3x3 um pixel size, and 96 dB dynamic range. Ideal for applications requiring high-quality digital imaging in automotive cameras, surveillance systems, and drones at temperatures ranging from -40 to 105 °C.

Median Price

$12.300

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 692 parts In-Stock

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USA . 692 parts In-Stock

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Vyrian

USA . 4,833 parts In-Stock

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Digiode

USA . 2,465 parts In-Stock

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USA . 692 parts In-Stock

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Corohmni

South Africa . 270 parts In-Stock

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Kulean Microsystems

USA . 8,133 parts In-Stock

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Problanco Electronics

Mexico . 8,100 parts In-Stock

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TANS Electronics

Latvia . 5,968 parts In-Stock

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Corphita

USA . 1,518 parts In-Stock

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UHIMA Technologies

Türkiye . 333 parts In-Stock

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Native Components

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SupplyDigital Components

Austria . 287 parts In-Stock

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Northwest PG Solutions

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Overview

Capture stunning images with the AR0140AT2C00XUEA0-TPBR image sensor from Onsemi. This top-quality sensor offers unmatched precision and clarity, making it perfect for a wide range of applications. Whether you're capturing breathtaking landscapes or intricate details, this sensor delivers exceptional results every time. Trust Onsemi's reputation for excellence and innovation in image sensor technology. Upgrade your imaging capabilities with the AR0140AT2C00XUEA0-TPBR and experience the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for high resolution and detailed image capture.

Maximum Supply Voltage: 1.95 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock: 50 MHz

High clock frequency enables fast data capture and processing.

Body Width: 9 inch

Compact and slim design for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensor technology provides high-quality image output with low power consumption.

Package Shape or Style: SQUARE

Square package shape allows for efficient use of space during installation.

Minimum Supply Voltage: 1.7 V

Can operate at a low minimum supply voltage, conserving energy.

Maximum Operating Temperature: 105 °C

Wide operating temperature range for use in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count for sharp and detailed images.

Output Range: 0.40-1.50V

Wide output range for versatile compatibility and signal strength adjustment.

Output Type: DIGITAL VOLTAGE

Digital voltage output for easy integration with digital systems and processing units.

Minimum Operating Temperature: -40 °C

Operates reliably in extremely low temperatures for diverse applications.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish for durable and reliable connections.

Maximum Operating Current: 170 mA

Moderate operating current consumption for efficient power usage.

Dynamic Range: 96 dB

Wide dynamic range for capturing both bright and dark details in images.

Vertical Pixel: 800

Good vertical pixel count for balanced image resolution.

Body Length/Diameter: 9 mm

Compact and sleek body design for easy integration and aesthetics.

Optical Format (inch): 1/4

Standard optical format for compatibility with various lenses and applications.

Termination Type: SOLDER

Solder termination for secure and long-lasting connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for simplified communication and control.

Frame Rate: 60 fps

High frame rate for smooth and detailed video recording and playback.

Array Type: LINEAR

Linear array type for efficient and accurate image capture.

Mounting Feature: SURFACE MOUNT

Surface mount option for easy and secure installation on circuit boards or other surfaces.

Technical Specifications

Image Sensors AR0140AT2C00XUEA0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.5 TO 3.1 V ANALOG SUPPLY VOLTAGE

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

96 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

170 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

800

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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