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MT9V011P11STC-B-DP

Onsemi

MT9V011P11STC-B-DP by Onsemi

MT9V011P11STC-B-DP by Onsemi is a 640x480 CMOS image sensor with 5.60um pixel size, 27 MHz master clock, and 60dB dynamic range. Ideal for digital cameras, surveillance systems, and automotive applications due to its high resolution and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,441 parts In-Stock

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Digiode

USA . 392 parts In-Stock

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Nova Conductors

Japan . 89 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 745 parts In-Stock

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$9.647

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745

$9.647

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Ampacity Inc.

Singapore . 849 parts In-Stock

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$34.750

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SupplyDigital Components

Austria . 8,275 parts In-Stock

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Continental Prestige Electronics

USA . 6,436 parts In-Stock

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TANS Electronics

Latvia . 6,136 parts In-Stock

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Problanco Electronics

Mexico . 5,446 parts In-Stock

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Kulean Microsystems

USA . 4,084 parts In-Stock

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UHIMA Technologies

Türkiye . 744 parts In-Stock

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Argo Parts USA

USA . 372 parts In-Stock

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Corohmni

South Africa . 189 parts In-Stock

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Corphita

USA . 132 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Elevate your imaging projects with the Onsemi MT9V011P11STC-B-DP image sensor. Crafted by a reputable manufacturer, this sensor offers unparalleled quality and reliability. Perfect for a wide range of applications, this sensor provides clear, crisp images with a high dynamic range. From security cameras to medical devices, this sensor delivers exceptional performance. Upgrade your imaging solutions today with the Onsemi MT9V011P11STC-B-DP and see the difference in your results.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

Provides high resolution images with detailed quality.

Maximum Supply Voltage: 3.05 V

Ensures stable and reliable power supply for optimal performance.

Master Clock: 27 MHz

Allows for fast processing of image data.

Body Width: 11.43 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Uses advanced CMOS technology for efficient image capturing.

Minimum Supply Voltage: 2.55 V

Can operate at lower voltages for energy efficiency.

Maximum Operating Temperature: 60 °C

Can withstand high temperatures for extended use in various environments.

Output Range: 0.20-2.60V

Provides a wide range of output voltages for flexible compatibility.

Output Interface Type: 2-WIRE INTERFACE

Easy connectivity options for seamless integration with other devices.

Frame Rate: 30 fps

Delivers smooth and fluid video recording capabilities.

Technical Specifications

Image Sensors MT9V011P11STC-B-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

4.05 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

60 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

8 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-20 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

3.05 V

Minimum Supply Voltage:

2.55 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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