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KAF-39000-CAA-DD-AA

Onsemi

KAF-39000-CAA-DD-AA by Onsemi

The Onsemi KAF-39000-CAA-DD-AA is an image sensor with 6.8X6.8 um pixel size, 7216 horizontal pixels, and 5412 vertical pixels. It operates at temperatures ranging from 0 to 60 °C and requires a power supply of 15V. This sensor is ideal for applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,090 parts In-Stock

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Digiode

USA . 1,623 parts In-Stock

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SupplyDigital Components

Austria . 8,257 parts In-Stock

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Problanco Electronics

Mexico . 5,952 parts In-Stock

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Kulean Microsystems

USA . 5,094 parts In-Stock

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Corphita

USA . 1,891 parts In-Stock

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TANS Electronics

Latvia . 1,736 parts In-Stock

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Corohmni

South Africa . 363 parts In-Stock

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UHIMA Technologies

Türkiye . 273 parts In-Stock

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Overview

Capture stunning images with the KAF-39000-CAA-DD-AA Image Sensor from Onsemi. Known for their exceptional quality and reliability, Onsemi delivers top-of-the-line products that exceed expectations. This sensor is perfect for a wide range of applications, offering unparalleled clarity and precision. Elevate your projects with the value and benefits that this sensor provides, ensuring optimal performance and unmatched results every time.

Feature Benefit Bullets

Pixel Size (um) 6.8X6.8

The small pixel size allows for high resolution images to be captured with fine details, making this sensor suitable for applications requiring precision.

Power Supplies (V) 15

The 15V power supply gives the sensor a stable voltage input, ensuring consistent and reliable performance in various operating conditions.

Maximum Operating Temperature 60 °C

With a maximum operating temperature of 60 °C, this sensor can withstand high temperature environments without compromising its functionality.

Horizontal Pixel 7216

The high number of horizontal pixels results in sharp and detailed images with excellent clarity, making this sensor ideal for high-resolution imaging applications.

Minimum Operating Temperature 0 °C

The sensor can operate effectively in cold temperatures down to 0 °C, making it suitable for use in a wide range of environments.

Vertical Pixel 5412

The vertical pixel count contributes to the overall image quality and resolution, allowing for high-quality images to be captured with accurate color reproduction.

Mounting Feature THROUGH HOLE MOUNT

The through hole mounting feature provides a secure and stable installation method, ensuring that the sensor is securely in place for consistent and reliable performance.

Technical Specifications

Image Sensors KAF-39000-CAA-DD-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Horizontal Pixel:

7216

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Pixel Size (um):

6.8X6.8

Power Supplies (V):

15

Sub-Category:

CCD Image Sensors

Vertical Pixel:

5412

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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