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MT9F002I12STCV-DP

Onsemi

MT9F002I12STCV-DP by Onsemi

Onsemi's MT9F002I12STCV-DP is a 1/2.3" CMOS image sensor with 4608x3288 pixels, offering a 65.3 dB dynamic range and operating at 13.7 fps. It has a pixel size of 1.40um x 1.40um, suitable for digital cameras and surveillance systems due to its high resolution and low light performance capabilities.

Median Price

$33.380

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2 parts In-Stock

1+ parts

-

100+ parts

$33.380

1k+ parts

$29.870

10k+ parts

$28.110

2

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$33.380

$29.870

$28.110

Distributors (In-Stock)

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Digiode

USA . 361 parts In-Stock

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$35.330

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361

$35.330

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Vyrian

USA . 8,828 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Bristol Electronics

USA . 282 parts In-Stock

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282

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Distributors (Availability)

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AZTECH Wire

Italy . 1,017 parts In-Stock

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$16.840

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$16.840

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Ampacity Inc.

Singapore . 2 parts In-Stock

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$31.610

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Corphita

USA . 2,444 parts In-Stock

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$33.471

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$33.471

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Corohmni

South Africa . 377 parts In-Stock

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$37.190

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377

$37.190

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 7,171 parts In-Stock

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Problanco Electronics

Mexico . 6,458 parts In-Stock

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TANS Electronics

Latvia . 939 parts In-Stock

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Kulean Microsystems

USA . 855 parts In-Stock

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UHIMA Technologies

Türkiye . 194 parts In-Stock

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Perfect Parts

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Netroflash

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Overview

Capture stunning images with the Onsemi MT9F002I12STCV-DP image sensor. Manufactured by industry leader Onsemi, this cutting-edge CMOS sensor offers unparalleled quality and performance. Ideal for a wide range of applications, from industrial to consumer electronics, this sensor delivers crisp, high-resolution images with exceptional clarity. With a compact design and advanced features, the MT9F002I12STCV-DP provides value and versatility to meet all your imaging needs. Elevate your products with the superior capabilities of this innovative image sensor.

Feature Benefit Bullets

Pixel Size (um): 1.40X1.40

Large pixel size allows for better light-gathering capability, resulting in improved image quality and low-light performance.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage provides flexibility in powering the sensor and enables it to work with a wider range of systems.

Master Clock: 64 MHz

High master clock frequency allows for fast readout speeds and efficient data processing.

Body Width: 10 inch

Compact body width enables easy integration into various devices and systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers low power consumption, high sensitivity, and excellent image quality, making it an ideal choice for many applications.

Body Height: 1.25 mm

Low body height allows for compact and slim device designs while still providing high-quality imaging capabilities.

Package Shape or Style: SQUARE

Square package shape is easy to mount and align, making it convenient for assembly and integration into various systems.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and extending battery life in portable devices.

Maximum Operating Temperature: 70 °C

Wide temperature range allows the sensor to operate in various environmental conditions without compromising performance.

Horizontal Pixel: 4608

High horizontal pixel count provides detailed and high-resolution images, suitable for a wide range of applications.

Output Range: 0.40-1.40V

Wide output voltage range allows for flexible signal processing and compatibility with different systems and interfaces.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies data processing and transmission, making it easier to integrate the sensor into digital systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures the sensor can function reliably even in cold environments.

Maximum Operating Current: 75 mA

Low operating current helps in conserving power and reducing heat generation in the sensor, improving overall system efficiency.

Housing: PLASTIC

Plastic housing provides durability, lightweight construction, and cost-effectiveness for the sensor.

Dynamic Range: 65.3 dB

High dynamic range enables the sensor to capture both bright and dark regions in an image accurately, resulting in better overall image quality.

Vertical Pixel: 3288

High vertical pixel count contributes to improved image resolution and sharpness, enhancing overall image quality.

Body Length/Diameter: 10 mm

Compact body length/diameter facilitates easy integration into devices with limited space, without sacrificing performance.

Optical Format (inch): 1/2.3

Standard optical format size ensures compatibility with various lenses and optical systems for seamless integration.

Termination Type: SOLDER

Solder termination allows for secure and reliable electrical connections, ensuring consistent performance in various operating conditions.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies data communication and integration with electronic systems, making it easier to use the sensor in different applications.

Frame Rate: 13.7 fps

Fast frame rate enables real-time image capture and video recording, suitable for applications that require high-speed imaging.

Array Type: FRAME

Frame array type allows for capturing full-frame images quickly and efficiently, making it suitable for various imaging applications.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies installation and integration of the sensor onto circuit boards, saving space and streamlining manufacturing processes.

Technical Specifications

Image Sensors MT9F002I12STCV-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.70-3.10 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

65.3 dB

Frame Rate:

13.7 fps

Horizontal Pixel:

4608

Housing:

PLASTIC

Master Clock:

64 MHz

Mounting Feature:

Maximum Operating Current:

75 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.40X1.40

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

3288

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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