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MT9V138C12STC-DR

Onsemi

MT9V138C12STC-DR by Onsemi

Onsemi's MT9V138C12STC-DR is a 5.60x5.60 um CMOS image sensor with 680H x 512V pixels, operating at 30 fps. It has a max supply voltage of 1.9V and a dynamic range of 74.8 dB, suitable for digital imaging applications in various industries.

Median Price

$8.662

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 97 parts In-Stock

1+ parts

-

100+ parts

$7.700

1k+ parts

$6.890

10k+ parts

$6.490

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$7.700

$6.890

$6.490

Verical

USA . 97 parts In-Stock

1+ parts

-

100+ parts

$9.625

1k+ parts

$8.613

10k+ parts

$8.113

97

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$9.625

$8.613

$8.113

Distributors (In-Stock)

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Digiode

USA . 735 parts In-Stock

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$8.151

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$8.151

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Vyrian

USA . 4,153 parts In-Stock

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Corphita

USA . 725 parts In-Stock

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$7.722

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725

$7.722

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Corohmni

South Africa . 232 parts In-Stock

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$8.580

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232

$8.580

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AZTECH Wire

Italy . 488 parts In-Stock

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$14.240

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$14.240

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Problanco Electronics

Mexico . 8,053 parts In-Stock

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TANS Electronics

Latvia . 6,198 parts In-Stock

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Kulean Microsystems

USA . 3,365 parts In-Stock

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SupplyDigital Components

Austria . 1,815 parts In-Stock

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UHIMA Technologies

Türkiye . 109 parts In-Stock

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Kepictronics

USA . 97 parts In-Stock

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97

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Overview

Capture every moment with the MT9V138C12STC-DR Image Sensor by Onsemi. Known for their superior quality and innovative technology, Onsemi delivers cutting-edge solutions that exceed expectations. This sensor is perfect for a wide range of applications, offering high performance and reliability. Elevate your projects with the unmatched value, benefits, and advantages that this product brings to the table. Trust Onsemi to provide you with the best in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

Small pixel size allows for high resolution images to be captured

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption

Master Clock: 27 MHz

High master clock frequency enables fast data processing

Body Width: 11.43 inch

Compact size makes it easy to fit into various devices

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers high sensitivity and low noise performance

Package Shape or Style: SQUARE

Square package shape provides easier integration into circuit boards

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures efficient power usage

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for usage in various environments

Horizontal Pixel: 680

High horizontal pixel count results in detailed images

Output Range: -0.30-2.80V

Wide output range provides flexibility in signal processing

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and transmission

Minimum Operating Temperature: -30 °C

Low minimum operating temperature extends usability in cold conditions

Maximum Operating Current: 50 mA

Low operating current helps in reducing power consumption

Housing: CERAMIC

Ceramic housing offers durability and reliability

Dynamic Range: 74.8 dB

High dynamic range ensures accurate image capture in varying light conditions

Vertical Pixel: 512

High vertical pixel count contributes to detailed image resolution

Body Length/Diameter: 11.43 mm

Compact size allows for easy integration into devices

Optical Format (inch): 1/4

Common optical format for compatibility with various lenses

Termination Type: SOLDER

Solder termination provides secure connection during installation

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connection to other components

Frame Rate: 30 fps

High frame rate enables smooth video recording and capture

Array Type: FRAME

Frame array type offers organized pixel arrangement for structured image capture

Mounting Feature: SURFACE MOUNT

Surface mount feature facilitates easy and secure installation on circuit boards

Technical Specifications

Image Sensors MT9V138C12STC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.25 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

74.8 dB

Frame Rate:

30 fps

Horizontal Pixel:

680

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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