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KAI-04022-FBA-CR-BA

Onsemi

KAI-04022-FBA-CR-BA by Onsemi

KAI-04022-FBA-CR-BA by Onsemi is an image sensor with 2048x2048 pixels, 7.4um pixel size, and 72dB dynamic range. Ideal for applications requiring high-resolution imaging in a compact form factor, such as industrial machine vision systems or scientific cameras.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,598 parts In-Stock

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Digiode

USA . 1,491 parts In-Stock

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SupplyDigital Components

Austria . 6,815 parts In-Stock

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TANS Electronics

Latvia . 6,644 parts In-Stock

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Problanco Electronics

Mexico . 5,273 parts In-Stock

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Kulean Microsystems

USA . 3,537 parts In-Stock

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Corohmni

South Africa . 487 parts In-Stock

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Corphita

USA . 441 parts In-Stock

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UHIMA Technologies

Türkiye . 73 parts In-Stock

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Overview

Capture the finest details with the KAI-04022-FBA-CR-BA image sensor by Onsemi. Crafted with precision and innovation, this sensor delivers unparalleled quality and reliability. Ideal for a wide range of applications, from industrial imaging to medical diagnostics, this sensor offers exceptional value, enabling you to bring your visions to life with ease. Trust in Onsemi's expertise and experience in image sensor technology, and elevate your projects to new heights with the KAI-04022-FBA-CR-BA.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications requiring detailed image capture.

Maximum Supply Voltage: 15.5 V

High maximum supply voltage provides flexibility in power supply options and ensures stable performance under varying voltage conditions.

Body Width: 25.65 inch

Compact body width makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The use of CCD technology ensures high-quality image capture and low noise performance, making this sensor suitable for demanding imaging applications.

Body Height: 4.95 mm

Low body height allows for easy integration into compact devices without adding bulk.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides easy mounting and integration into existing systems or devices.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage requirement ensures energy efficiency and compatibility with a wide range of power sources.

Maximum Operating Temperature: 70 °C

High maximum operating temperature range allows for reliable performance in challenging environmental conditions.

Horizontal Pixel: 2048

High horizontal pixel count enables high-resolution image capture, suitable for detailed imaging applications.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature range enables this image sensor to be used in extreme temperature environments.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, ensuring long-term reliability of the image sensor.

Dynamic Range: 72 dB

High dynamic range allows for the capture of images with a wide range of brightness levels, ensuring accurate and detailed image reproduction.

Vertical Pixel: 2048

High vertical pixel count complements the horizontal resolution, contributing to high-quality image capture.

Body Length/Diameter: 35.56 mm

Moderate body length/diameter allows for easy installation and integration into various devices or systems.

Optical Format (inch): 4/3

4/3 optical format is commonly used in imaging applications, offering compatibility with a wide range of lenses and accessories.

Termination Type: SOLDER

Solder termination provides a reliable and secure electrical connection, ensuring stable performance in use.

Array Type: INTERLINE

Interline array type enables fast readout speeds and low noise performance, making this image sensor suitable for high-speed imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature allows for easy and secure installation of the image sensor on PCBs or other surfaces.

Technical Specifications

Image Sensors KAI-04022-FBA-CR-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.65 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Dynamic Range:

72 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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