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KLI-8023-AAA-ED-AA

Onsemi

KLI-8023-AAA-ED-AA by Onsemi

The Onsemi KLI-8023-AAA-ED-AA image sensor features 9x9 um pixel size, 15.5V max supply voltage, and 8002 horizontal pixels. Ideal for applications requiring high-resolution imaging in a compact form factor with a spectral response of 350-850 nm.

Median Price

$8,104.880

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 13 parts In-Stock

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Verical

USA . 13 parts In-Stock

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13

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Distributors (In-Stock)

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Digiode

USA . 1,668 parts In-Stock

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$7,699.636

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Vyrian

USA . 4,750 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,106 parts In-Stock

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$7,294.392

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Corohmni

South Africa . 310 parts In-Stock

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Problanco Electronics

Mexico . 5,775 parts In-Stock

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TANS Electronics

Latvia . 5,689 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 3,660 parts In-Stock

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UHIMA Technologies

Türkiye . 202 parts In-Stock

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Kulean Microsystems

USA . 36 parts In-Stock

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Overview

Experience the unparalleled quality and innovation of Onsemi with the KLI-8023-AAA-ED-AA image sensor. Perfect for a wide range of applications, this cutting-edge sensor offers exceptional performance and reliability. With a sleek design and advanced features, customers can expect superior image quality and accuracy in their projects. Trust Onsemi to deliver the value and benefits you need for your imaging needs. Choose the KLI-8023-AAA-ED-AA for top-notch results every time.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for better performance and flexibility in power management.

Body Width: 15.49 inch

Compact body width makes it suitable for applications where space is limited.

Power Supplies (V): 15

Standard power supply voltage ensures compatibility with existing systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensor technology provides high-quality, low-noise image capture for improved image quality.

Body Height: 6.1 mm

Low profile body height makes it suitable for applications where space constraints are a concern.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy integration into various devices and systems.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in reducing power consumption and increasing efficiency.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures reliable performance even in demanding environmental conditions.

Horizontal Pixel: 8002

High horizontal pixel count enables high-resolution imaging for detailed and sharp images.

Output Range: 5.2-5.5V

Stable output voltage range ensures consistent and reliable signal output for data processing.

Output Type: ANALOG VOLTAGE

Analog voltage output allows for easy interfacing with other analog electronics for signal processing.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and protection for the sensor in harsh environments.

Dynamic Range: 84 dB

High dynamic range enables the sensor to capture a wide range of light intensities, preserving details in bright and dark areas.

Vertical Pixel: 8002

High vertical pixel count complements the horizontal pixel count for detailed image capture.

Body Length/Diameter: 93.98 mm

Long body length provides space for the sensor array while maintaining a compact form factor.

Spectral Response (nm): 350-850

Wide spectral response range enables the sensor to capture a broad range of colors and wavelengths.

Data Rate: 6 Mbps

High data rate allows for fast and efficient transmission of image data for real-time processing.

Termination Type: SOLDER

Solder termination provides a reliable and secure connection for integrating the sensor into a system.

Array Type: LINEAR

Linear array configuration allows for precise and accurate image capture with minimal distortion.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature makes installation and integration easy and secure.

Technical Specifications

Image Sensors KLI-8023-AAA-ED-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY 14 UV/ELECTRON

Array Type:

LINEAR

Body Width:

15.49 inch

Body Height:

6.1 mm

Body Length/Diameter:

93.98 mm

Data Rate:

6 Mbps

Dynamic Range:

84 dB

Horizontal Pixel:

8002

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

9X9

Power Supplies (V):

15

Sensors or Transducers Type:

Spectral Response (nm):

350-850

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

8002

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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