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MT9V022IA7ATM-DR1

Onsemi

MT9V022IA7ATM-DR1 by Onsemi

Onsemi's MT9V022IA7ATM-DR1 is a 6x6 um CMOS image sensor with 752H x 480V pixels, operating at 26.6 MHz clock speed. It offers a dynamic range of 55 dB and sensitivity of 4.8 V/lx.s, suitable for applications requiring high-quality digital imaging in industrial automation and surveillance systems.

Median Price

$13.186

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Flip Electronics

USA . 260 parts In-Stock

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$1.930

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$1.930

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Nova Conductors

Japan . 50 parts In-Stock

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$24.442

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50

$24.442

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Vyrian

USA . 8,155 parts In-Stock

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Digiode

USA . 1,790 parts In-Stock

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Bristol Electronics

USA . 746 parts In-Stock

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746

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Distributors (Availability)

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AZTECH Wire

Italy . 875 parts In-Stock

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$13.420

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875

$13.420

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Corohmni

South Africa . 324 parts In-Stock

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$23.474

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Aranea Global

USA . 2,000 parts In-Stock

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$23.953

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$22.995

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$23.953

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$22.995

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Continental Prestige Electronics

USA . 2,637 parts In-Stock

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$24.442

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$23.953

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Ampacity Inc.

Singapore . 296 parts In-Stock

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$26.750

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$26.750

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Semicontronic

India . 127 parts In-Stock

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$48.750

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$47.531

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$47.288

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Problanco Electronics

Mexico . 7,016 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Kulean Microsystems

USA . 6,206 parts In-Stock

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TANS Electronics

Latvia . 4,754 parts In-Stock

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SupplyDigital Components

Austria . 3,613 parts In-Stock

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Argo Parts USA

USA . 3,523 parts In-Stock

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UHIMA Technologies

Türkiye . 585 parts In-Stock

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Corphita

USA . 86 parts In-Stock

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Overview

Enhance your imaging experience with the MT9V022IA7ATM-DR1 by Onsemi. Designed with precision and quality in mind, this image sensor offers exceptional performance in a compact package. Whether you're capturing stunning visuals for security systems, industrial applications, or medical devices, this sensor delivers outstanding results. Trust Onsemi's reputation for excellence and reliability, and unlock the full potential of your imaging projects with the MT9V022IA7ATM-DR1.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 3.6 V

Provides sufficient power for the image sensor to function optimally.

Master Clock: 26.6 MHz

High master clock frequency enables fast data processing and imaging.

Body Width: 9 inch

Compact size makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers high sensitivity and low noise for quality image capture.

Body Height: 1.3 mm

Low profile design facilitates easy integration into devices or systems.

Package Shape or Style: SQUARE

Square package shape enables efficient layout and assembly on circuit boards.

Minimum Supply Voltage: 3 V

Provides flexibility in power supply options without compromising performance.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 752

High pixel count horizontally enhances image resolution and clarity.

Output Range: -9-9mA

Wide output range allows for capturing images with a broad range of brightness levels.

Output Type: DIGITAL CURRENT

Digital current output simplifies signal processing and integration with other digital systems.

Minimum Operating Temperature: -40 °C

Allows for operation in extreme cold conditions without performance degradation.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish ensures long-term reliability and connectivity.

Maximum Operating Current: 60 mA

High operating current capability supports reliable and continuous operation.

Housing: PLASTIC/EPOXY

Provides lightweight and impact-resistant housing for the image sensor.

Dynamic Range: 55 dB

Wide dynamic range captures both dark and bright areas in an image accurately.

Vertical Pixel: 480

Vertical pixel count enhances image detail and resolution.

Body Length/Diameter: 9 mm

Compact body size allows for easy installation and integration.

Spectral Response (nm): 350-1050

Wide spectral response range enables capturing images in various lighting conditions.

Optical Format (inch): 1/3

Standard optical format for compatibility with a wide range of lenses and accessories.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for long-term use.

Output Interface Type: 2-WIRE INTERFACE

Allows for easy integration and communication with external devices or systems.

Frame Rate: 60 fps

High frame rate enables smooth and fast video capture for dynamic scenes.

Array Type: FRAME

Frame array design enhances image capture efficiency and data processing.

Sensitivity (V/lx.s): 4.8 V/lx.s

High sensitivity allows for capturing clear and detailed images in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies installation and integration into devices or systems.

Technical Specifications

Image Sensors MT9V022IA7ATM-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DATA RATE OF 26.6MB/S, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V, IT ALSO HAVE DYNAMIC RANGE 80DB-100DB IN HIDY MODE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

55 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Housing:

PLASTIC/EPOXY

JESD-609 Code:

e1

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensitivity (V/lx.s):

4.8 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-1050

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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