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KAI-02150-AAA-JP-AE

Onsemi

KAI-02150-AAA-JP-AE by Onsemi

Onsemi's KAI-02150-AAA-JP-AE is a 5.5X5.5 um CCD image sensor with 1920x1080 resolution, 64 dB dynamic range, and 2/3 inch optical format. It operates b/w -50 to 70 °C, with supply voltage ranging from 14.5V to 15.5V. Ideal for high-quality imaging applications requiring precise color reproduction and low-light performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,264 parts In-Stock

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Digiode

USA . 1,159 parts In-Stock

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Problanco Electronics

Mexico . 8,155 parts In-Stock

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Kulean Microsystems

USA . 5,656 parts In-Stock

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TANS Electronics

Latvia . 5,214 parts In-Stock

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SupplyDigital Components

Austria . 3,924 parts In-Stock

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Corphita

USA . 1,092 parts In-Stock

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Corohmni

South Africa . 435 parts In-Stock

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UHIMA Technologies

Türkiye . 151 parts In-Stock

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Overview

Unlock a world of high-quality imaging with the KAI-02150-AAA-JP-AE by Onsemi. Designed to deliver stunning visuals, this image sensor is perfect for a wide range of applications. From industrial machine vision to surveillance systems, this sensor offers unmatched performance and reliability. With Onsemi's reputation for excellence in manufacturing, you can trust that you're getting a top-of-the-line product. Take your projects to the next level with the KAI-02150-AAA-JP-AE and experience the value and benefits it brings to your work.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for greater flexibility in power supply options.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality images with low noise levels, making them ideal for imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy integration into various devices and systems.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures reliable performance even in hot environments.

Horizontal Pixel: 1920

High horizontal pixel count enables capturing of detailed and sharp images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures the sensor can function in extreme cold conditions.

Dynamic Range: 64 dB

Wide dynamic range allows for capturing both bright and dark areas in an image accurately.

Vertical Pixel: 1080

High vertical pixel count ensures high-resolution images with good clarity and depth.

Optical Format (inch): 2/3

2/3 inch optical format provides a good balance between sensor size and image quality.

Termination Type: SOLDER

Solder termination type offers easy and secure connections for installation and maintenance.

Array Type: INTERLINE

Interline array type helps in reducing blooming effects and improving image quality in high contrast scenes.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature ensures secure and stable installation in various devices and systems.

Technical Specifications

Image Sensors KAI-02150-AAA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

1920

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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