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AR0132AT6C00XPEA0-TPBR

Onsemi

AR0132AT6C00XPEA0-TPBR by Onsemi

Onsemi's AR0132AT6C00XPEA0-TPBR is a 1/3" CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 115dB dynamic range. Ideal for applications requiring high-quality digital imaging at up to 60fps, such as surveillance cameras and industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,075 parts In-Stock

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Digiode

USA . 1,094 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 223 parts In-Stock

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$0.147

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$0.141

223

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Northwest PG Solutions

USA . 833 parts In-Stock

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$0.161

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$0.142

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AZTECH Wire

Italy . 1,189 parts In-Stock

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$19.770

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Perfect Parts

USA . 53,760 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Kulean Microsystems

USA . 6,176 parts In-Stock

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SupplyDigital Components

Austria . 4,856 parts In-Stock

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Corphita

USA . 1,010 parts In-Stock

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TANS Electronics

Latvia . 787 parts In-Stock

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UHIMA Technologies

Türkiye . 303 parts In-Stock

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Problanco Electronics

Mexico . 248 parts In-Stock

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Discover the AR0132AT6C00XPEA0-TPBR by Onsemi, a cutting-edge image sensor that sets the standard for quality and innovation in the industry. With a wide range of applications, this sensor is perfect for capturing high-quality images in various environments. Onsemi's reputation for excellence ensures that you are getting a reliable and top-of-the-line product. Experience the value and benefits of this sensor with its high dynamic range, fast frame rate, and compact design. Elevate your imaging solutions with the AR0132AT6C00XPEA0-TPBR and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 3.75

The small pixel size allows for high resolution imaging and detailed captures, making this product suitable for applications requiring precise image quality.

Maximum Supply Voltage: 1.95 V

The high maximum supply voltage ensures stable and reliable performance under varying operating conditions, providing consistent output.

Master Clock: 50 MHz

The high master clock frequency enables fast and efficient data processing, facilitating quick image capture and transmission.

Body Width: 9 inch

The compact body width allows for easy integration and placement within devices or systems with limited space, enhancing flexibility in design.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

The CMOS sensor type offers low power consumption and high sensitivity, making this product energy-efficient and suitable for low-light imaging applications.

Body Height: 1.4 mm

The slim body height enables a sleek and compact design for devices using this image sensor, enhancing overall aesthetics and portability.

Package Shape or Style: SQUARE

The square package shape allows for efficient utilization of space and easier alignment during assembly, simplifying manufacturing processes.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage ensures compatibility with a wide range of power sources, providing flexibility in device integration and operation.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature range enables reliable performance in harsh environmental conditions, making this product suitable for outdoor or industrial applications.

Horizontal Pixel: 1280

The high horizontal pixel count allows for detailed and sharp image capture, providing high-resolution output for enhanced image quality.

Output Range: 0.40-1.50V

The wide output range allows for flexibility in signal processing and compatibility with various data acquisition systems, enhancing versatility in system integration.

Output Type: DIGITAL VOLTAGE

The digital voltage output ensures easy interfacing with digital devices and processors, simplifying data transfer and analysis processes.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range allows for reliable performance in cold environments, making this product suitable for outdoor or industrial use in extreme conditions.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides corrosion resistance and excellent electrical conductivity, ensuring long-term reliability and stable performance of the image sensor.

Maximum Operating Current: 130 mA

The low maximum operating current consumption reduces power usage and heat generation, making this product energy-efficient and suitable for battery-powered devices.

Dynamic Range: 115 dB

The high dynamic range allows for accurate capture of both bright and dark areas in an image, providing detailed and natural-looking pictures with excellent contrast.

Vertical Pixel: 960

The vertical pixel count provides enhanced imaging capabilities, allowing for better image composition and depth perception in captured scenes.

Body Length/Diameter: 9 mm

The compact body length/diameter contributes to a space-saving design for devices integrating this image sensor, enhancing overall compactness and portability.

Optical Format (inch): 1/3

The 1/3 inch optical format offers a good balance between sensor size and image quality, making this product suitable for a wide range of imaging applications.

Termination Type: SOLDER

The solder termination type ensures secure and durable connections, providing reliable electrical contact for optimal performance of the image sensor.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies communication and control of the image sensor, enabling easy integration with other devices and systems for seamless operation.

Frame Rate: 60 fps

The high frame rate allows for smooth and fluid motion capture, making this product ideal for applications requiring high-speed imaging and video recording.

Array Type: LINEAR

The linear array type offers precise image alignment and uniform pixel distribution, providing consistent image quality and sharpness across the entire frame.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure attachment to PCBs or other surfaces, simplifying assembly and offering flexibility in device design.

Technical Specifications

Image Sensors AR0132AT6C00XPEA0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

115 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

130 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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