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AR0220AT3R00XUEA0-VL-DPBR

Onsemi

AR0220AT3R00XUEA0-VL-DPBR by Onsemi

The Onsemi AR0220AT3R00XUEA0-VL-DPBR is an image sensor with 1828x948 pixels, 120dB dynamic range, and 60fps frame rate. It operates b/w -40 to 105 °C and uses a 2-wire interface. Ideal for applications requiring high-resolution imaging in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,417 parts In-Stock

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1,417

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Digiode

USA . 773 parts In-Stock

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773

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TANS Electronics

Latvia . 7,418 parts In-Stock

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7,418

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Kulean Microsystems

USA . 4,589 parts In-Stock

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4,589

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Problanco Electronics

Mexico . 4,444 parts In-Stock

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SupplyDigital Components

Austria . 1,873 parts In-Stock

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1,873

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Corphita

USA . 1,125 parts In-Stock

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Northwest PG Solutions

USA . 1,115 parts In-Stock

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$4.577

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Native Components

USA . 905 parts In-Stock

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$4.530

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905

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Corohmni

South Africa . 252 parts In-Stock

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UHIMA Technologies

Türkiye . 181 parts In-Stock

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Overview

Experience crystal-clear imaging like never before with the AR0220AT3R00XUEA0-VL-DPBR image sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi's image sensors are perfect for a wide range of applications, from security cameras to automotive systems. Capture every detail with the high resolution and dynamic range of this sensor, providing unparalleled clarity in any situation. Trust Onsemi to deliver cutting-edge technology that exceeds your expectations. Elevate your imaging experience today with the AR0220AT3R00XUEA0-VL-DPBR.

Feature Benefit Bullets

Maximum Supply Voltage: 1.26 V

Provides the necessary power for optimal performance.

Master Clock: 27 MHz

Ensures fast and accurate image processing.

Body Width: 9 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor type for high-quality image capture.

Minimum Supply Voltage: 1.14 V

Allows for efficient power consumption.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures for extended use.

Horizontal Pixel: 1828

High pixel count for detailed image resolution.

Output Range: 0.40-1.20V

Provides a wide range of output voltages for flexibility.

Output Type: DIGITAL VOLTAGE

Digital output for easy data processing.

Minimum Operating Temperature: -40 °C

Can operate in cold environments without issues.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Quality terminal finish for reliable connections.

Maximum Operating Current: 220 mA

Can handle higher currents for improved performance.

Dynamic Range: 120 dB

Wide dynamic range for capturing both bright and dark details.

Vertical Pixel: 948

Additional vertical pixels for enhanced image quality.

Body Length/Diameter: 12 mm

Compact size for easy installation.

Optical Format (inch): 1/1.8

Optical format size suitable for various applications.

Termination Type: SOLDER

Secure solder termination for stable connections.

Output Interface Type: 2-WIRE INTERFACE

Simple interface for easy integration with other systems.

Frame Rate: 60 fps

High frame rate for smooth video output.

Array Type: FRAME

Frame array type for efficient image processing.

Mounting Feature: SURFACE MOUNT

Surface mount design for easy and secure installation.

Technical Specifications

Image Sensors AR0220AT3R00XUEA0-VL-DPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.65 mm

Body Length/Diameter:

12 mm

Dynamic Range:

120 dB

Frame Rate:

60 fps

Horizontal Pixel:

1828

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

220 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.8

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

948

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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